Wafer-scale production of uniform InAsyP1-ynanowire array on silicon for heterogeneous integration

ACS Nano

Volumn 7, Issue 6, 2013, Pages 5463-5471

  Shin, Jae Cheol ^a   Lee, Ari ^a   Katal Mohseni, Parsian ^b   Kim, Do Yang ^c,d   Yu, Lan ^b   Kim, Jae Hun ^c   Kim, Hyo Jin ^a   Choi, Won Jun ^c   Wasserman, Daniel ^b   Choi, Kyoung Jin ^d   Li, Xiuling ^b  

^a Korea Photonics Technology Institute (KOPTI)   (South Korea)

^b University of Illinois at Urbana Champaign   (United States)

^c Korea Institute of Science and Technology   (South Korea)

^d Ulsan National Institute of Science and Technology   (South Korea)

Author keywords

heterojunction; III V semiconductor; InAsyP1 y; MOCVD; nanowire

Indexed keywords

COMPOUND SEMICONDUCTORS; HETERO-INTERFACES; HETEROGENEOUS INTEGRATION; HETEROJUNCTION SOLAR CELLS; II-IV SEMICONDUCTORS; INAS; LARGE-SCALE PRODUCTION; ONE-DIMENSIONAL CRYSTALS;

ASPECT RATIO; EPITAXIAL GROWTH; HETEROJUNCTIONS; INTEGRATION; LATTICE MISMATCH; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOWIRES; OPTOELECTRONIC DEVICES; SILICON; SILICON COMPOUNDS;

SILICON WAFERS;

EID: 84879644256     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4014774     Document Type: Article

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