Effects of PECVD deposition fluxes on the spatial variation of thin film density of as-deposited SiO2 films in interconnect structures

Proceedings of the IEEE 1998 International Interconnect Technology Conference, IITC 1998

Volumn 1998-June, Issue , 1998, Pages 175-177

  Lee, K ^a   Deal, M ^a   McVittie, J ^a   Plummer, J ^a   Saraswat, K ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; ION EXCHANGE; SILICA; THIN FILMS;

DEPOSITION FLUXES; ETCH RATE VARIATIONS; INTERCONNECT STRUCTURES; ISOTROPIC WET ETCHING; PECVD DEPOSITIONS; SPATIAL VARIATIONS; THERMAL EXCHANGE; THIN FILM DENSITIES;

DEPOSITION;

EID: 84879520896     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IITC.1998.704783     Document Type: Conference Paper

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