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Volumn 25, Issue 24, 1986, Pages 4622-4625

Determination of absorption coefficients and thermal conductivity of gaaias/gaas heterostructure using a photothermal method

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM GALLIUM ARSENIDE; ELECTROMAGNETIC WAVE ABSORPTION; HETEROJUNCTIONS; LIGHT ABSORPTION; SPECTROSCOPIC ELLIPSOMETRY;

EID: 84879483087     PISSN: 1559128X     EISSN: 21553165     Source Type: Journal    
DOI: 10.1364/AO.25.004622     Document Type: Article
Times cited : (21)

References (10)
  • 1
    • 0021481544 scopus 로고
    • Determination of bsorption Coefficients of Thick Semiconductor Samples Using Photoacoustic Spectroscopy
    • J. Fesquet, B. Girault, and M. D. M. Razafindrandriatsimaniry, "Determination of bsorption Coefficients of Thick Semiconductor Samples Using Photoacoustic Spectroscopy," Appl. Opt. 23, 2784 (1984).
    • (1984) Appl. Opt. , vol.23 , pp. 2784
    • Fesquet, J.1    Girault, B.2    Razafindrandriatsimaniry, M.D.M.3
  • 3
    • 0019088661 scopus 로고
    • La photoacoustique renouveau d'une methode centenaire
    • J. Badoz, D. Fournier, and A. C. Boccara, "La photoacoustique renouveau d'une methode centenaire," J. Opt. 11, 399 (1980).
    • (1980) J. Opt. , vol.11 , pp. 399
    • Badoz, J.1    Fournier, D.2    Boccara, A.C.3
  • 4
    • 0018879032 scopus 로고
    • Extension of the Rosencwaig-Gersho Photoacoustic Spectroscopy heory to Include Effects of a Sample Coating
    • N. C. Fernelius, "Extension of the Rosencwaig-Gersho Photoacoustic Spectroscopy heory to Include Effects of a Sample Coating," J. Appl. Phys. 51, 650 (1980).
    • (1980) J. Appl. Phys. , vol.51 , pp. 650
    • Fernelius, N.C.1
  • 5
    • 0016873312 scopus 로고
    • Theory of the Photoacoustic Effect with Solids
    • A. Rosencwaig and A. Gersho, "Theory of the Photoacoustic Effect with Solids," J. Appl. Phys. 47, 64 (1976).
    • (1976) J. Appl. Phys. , vol.47 , pp. 64
    • Rosencwaig, A.1    Gersho, A.2
  • 6
    • 33847596250 scopus 로고
    • Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV
    • D. E. Aspnes and A. A. Studna, "Dielectric Functions and Optical Parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV," Phys. Rev. B 27, 123 (1983).
    • (1983) Phys. Rev. B , vol.27 , pp. 123
    • Aspnes, D.E.1    Studna, A.A.2
  • 7
    • 0000370588 scopus 로고
    • Thermal Conductivity of Silicon, Germanium, III-V Compounds and III-V Alloys
    • P. D. Maycock, "Thermal Conductivity of Silicon, Germanium, III-V Compounds and III-V Alloys," Solid State Electron. 10, 161, 168 (1967).
    • (1967) Solid State Electron , vol.161 , Issue.10 , pp. 168
    • Maycock, P.D.1
  • 8
    • 84975632045 scopus 로고
    • Thermal Conductivity of Gaj. AlAs Alloys
    • M. A. Afromowitz, "Thermal Conductivity of Gaj. AlAs Alloys," J. Appl. Phys. 44, 1092 (1973).
    • (1973) J. Appl. Phys. , vol.44 , pp. 1092
    • Afromowitz, M.A.1
  • 9
    • 0019613426 scopus 로고
    • Intervalley Scattering in GalAIAs Alloys
    • A. K. Saxena, "Intervalley Scattering in GalAIAs Alloys," J. Appl. Phys. 52, 5643 (1981).
    • (1981) J. Appl. Phys. , vol.52 , pp. 5643
    • Saxena, A.K.1
  • 10
    • 36549104020 scopus 로고
    • Electronic States and Thicknesses of GaAs/GaAlAs Quantum Wells as Measured by Electroreflectance and Spectroscopic Ellipsometry
    • M. Erman, J. B. Theeten, P. Frijlink, S. Gaillard, F. Jia Hua, and C. Alibert, "Electronic States and Thicknesses of GaAs/GaAlAs Quantum Wells as Measured by Electroreflectance and Spectroscopic Ellipsometry," J. Appl. Phys. 56, 3241 (1984).
    • (1984) J. Appl. Phys. , vol.56 , pp. 3241
    • Erman, M.1    Theeten, J.B.2    Frijlink, P.3    Gaillard, S.4    Jia Hua, F.5    Alibert, C.6


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.