Nonequilibrium radiation effects in VLSI

IEEE Transactions on Nuclear Science

Volumn 25, Issue 5, 1978, Pages 1144-1145

  Bradford, John N ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84879462832     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1978.4329492     Document Type: Article

References (8)

1. Science Magazine, p411, 27Jan78; R. Watson and M. Perlman, 1295, 24Mar78.
2. J. C. Garth, W. L. Chadsey, R. L. Sheppard, IEEE Vol. NS-22, No.6, 2562, Dec. 1975.
3. D. Binder, E. Smith, A. Holman, IEEE Vol. NS-22, No. 6, 2675, Dec. 1975.
4. W. C. Holton, Sci. Am., Sept. 1977.
5. E. Kobetich and R. Katz, Phys. Rev. 170, No. 2, June 1968. 170
6. M. N. Varma et al, Rad. Res.70, 511, 1977.
7. J. N. Bradford, Heavy Ion Radiation Effects in VLSI, in publication.
8. K. Galloway and P. Poitman, IEEE Vol. NS-24, No. 6, 2066, Dec. 1977.