Structural and electrical characteristics of high-κ ErTi xOy gate dielectrics on InGaZnO thin-film transistors

Thin Solid Films

Volumn 539, Issue , 2013, Pages 251-255

  Chen, Fa Hsyang ^a   Her, Jim Long ^a   Shao, Yu Hsuan ^a   Li, Wei Chen ^a   Matsuda, Yasuhiro H ^b   Pan, Tung Ming ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

Erbium titanium oxide; Gate dielectric; High dielectric constant; Indium gallium zinc oxide; Thin film transistors

Indexed keywords

ELECTRICAL CHARACTERISTIC; FIELD-EFFECT MOBILITIES; HIGH-DIELECTRIC CONSTANT; HIGH-TEMPERATURE ANNEALING; INDIUM-GALLIUM-ZINC OXIDES; LOW THRESHOLD VOLTAGE; MORPHOLOGICAL FEATURES; SUBTHRESHOLD SWING;

ANNEALING; ATOMIC FORCE MICROSCOPY; DIELECTRIC FILMS; ELECTRIC PROPERTIES; GALLIUM; GATE DIELECTRICS; INDIUM; INTERFACE STATES; INTERFACES (MATERIALS); OXYGEN; PHOTOELECTRONS; TITANIUM OXIDES; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 84879415395     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.04.139     Document Type: Article

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