Robust ultrathin (20-25 nm) trilayer dielectric low k Cu damascene cap for sub-30 nm nanoelectronic devices

ECS Transactions

Volumn 41, Issue 43, 2012, Pages 3-9

  Nguyen, Son ^a,b   Haigh, T ^a,b   Tagami, M ^c   Grill, A ^a,b   Cohen, S ^a,b   Shobha, H ^a,b   Hu, C ^a,b   Adams, E ^b   Liniger, E ^a,b   Shaw, T ^a,b   Cheng, T ^b   Yusuff, H ^b   Xu, Y ^b   Ko, T ^b   Molis, S ^b   Spooner, T ^a,b   Skodas, S ^b   Liu, X ^a,b   Bonilla, G ^a,b   Edelstein, D ^a,b  

^a IBM T J WATSON RESEARCH CENTER   (United States)

^b IBM   (United States)

^c RENESAS TECHNOLOGY CORP   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; LOW-K DIELECTRIC;

BACK END OF LINES; CU DAMASCENE; DEVICE CAPACITANCE; ELECTROCHEMICALS; NANOELECTRONIC DEVICES; STRESS STABILITY; TRILAYERS; ULTRA LOW-K; ULTRA-THIN;

COPPER;

EID: 84879340645     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.4717497     Document Type: Conference Paper

References (4)

1. Son Nguyen et al., Material Research Soc. Conference Proceeding, 2008, p 292, Paper N1.6. San Francisco, California USA.
2. ", G. Bonnilla, L.A. Clevenger, C. K. Hu, Son Nguyen, T. Cheng, H. Shobha, Z. Sun, S. Cohen, A. Fisher, K. Chanda, E. Liniger, W.P. Liu, Y. Xu, J. Gill, T. Shaw, M. Chase, S. Molis, R. Quon" Advanced Metallization Conference, pp. 673-679,San Diego, California USA, October 2008.
3. Son Nguyen, T. Haigh Jr., T. Shaw, S. Molis, H. Shobha, E. Liniger, C. K. Hu, N. Klymko, A. Grill. The Procedding of Electrochemical Society Fall 2009 Meeting, paper# 2159 Vienna, Austria, October 2009.
4. Son Nguyen, T. Haigh Jr., T. Shaw, S. Molis, C. Dziobkowski, C. Zahakos, S. Cohen, H.Shobha, E. Liniger, C. K. Hu, G. Bonilla, N. Klymko, A. Grill. The Proceeding of Electrochemical Society 2010 meeting, paper # 1685, Las Vegas, Nevada USA 10/2010.