Radiation hard 1.0µm cmos technology

IEEE Transactions on Nuclear Science

Volumn 34, Issue 6, 1987, Pages 1460-1463

  Lee, K H ^a   Desko, John C ^a   Kohler, Ross A ^a   Lawrence, Cris W ^a   Nag, William J ^a   Shimer, Julie A ^a   Steenwyk, Steven D ^a   Anderson, Richard E ^b   Fu, Julia S ^b  

^a LUCENT TECHNOLOGIES   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84879310255     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337498     Document Type: Article

References (8)

1. K.H. Lee et al., “Lightly Doped Drain Structure for Advanced CMOS (Twin-Tub IV)” IEDM Tech. Dig., pp242, 1985.
2. S. Hillenius et al., “A Symmetric SubMicron CMOS Technology” IEDM Tech. Dig., pp252, 1986.
3. M. Chen et al., “A High Performance Submicron CMOS Process with Self-Aligned Channel-Stop and Punch-Through Implants(Twin-Tub V)” IEDM Tech. Dig., pp256, 1986.
4. P. Winokur et al., “Correlating the Radiation Response of MOS Capacitors and Transistors” IEEE Trans. Nuc. Sci., NS-31 No 6, pp1453-1460, Dec. 1984
5. B. Bhuva et al., “Simulation of Worst-Case Total Radiation Effects in CMOS VLSI Circuits”, IEEE Trans. Nuc. Sci., NS-33 33 No 6, pp1546-1550, Dec. 1986
6. G. Derbenwick et al., “Process Optimization of Radiation Hardened CMOS Circuits”, IEEE Trans. Nuc. Sci., NS-22, No 6, pp2151-2156, Dec. 1975
7. A. Sabnis, “Process Dependent BuildUp of Interface States in Irradiated N-Channel MOSFETs”, IEEE Trans. Nuc. Sci., NS-32, 32, No 6, pp3905-3910, Dec. 1985
8. P. Buchman, “Total Dose Hardness Assurance for Microcircuits for Space Environments”, IEE Trans. Nuc. Sci., NS-33, No 6, pp1352-1358, Dec. 1986