Near room-temperature magnetoresistance effect in double perovskite La 2NiMnO6

Applied Physics Letters

Volumn 102, Issue 22, 2013, Pages

  Guo, Yuqiao ^a   Shi, Lei ^a   Zhou, Shiming ^a   Zhao, Jiyin ^a   Liu, Wenjie ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANTISITE DISORDER; DOUBLE PEROVSKITES; FERROMAGNETIC DOMAINS; FERROMAGNETIC SEMICONDUCTOR; MAGNETIC AND ELECTRONIC PROPERTIES; MAGNETORESISTANCE EFFECTS; ROOM TEMPERATURE; TUNNELING PROBABILITIES;

ELECTRON TUNNELING; ELECTRONIC PROPERTIES; FERROMAGNETIC MATERIALS; FERROMAGNETISM;

MAGNETORESISTANCE;

EID: 84879096007     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4808437     Document Type: Article

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