Role of oxygen vacancies in the resistive switching of SrZrO3 for resistance random access memory

Journal of Alloys and Compounds

Volumn 580, Issue , 2013, Pages 148-151

  Guo, Zhonglu ^a   Sa, Baisheng ^a   Zhou, Jian ^a   Sun, Zhimei ^a  

^a XIAMEN UNIVERSITY   (China)

Author keywords

Oxygen vacancies; Resistive switching; RRAM

Indexed keywords

CALCULATIONS; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; OXYGEN; RANDOM ACCESS STORAGE; RRAM; SWITCHING SYSTEMS; VACANCIES;

CONDUCTION CHANNEL; FIRST-PRINCIPLES CALCULATION; NON-VOLATILE MEMORY APPLICATION; RECORDING MATERIALS; RESISTANCE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; STRUCTURE AND PROPERTIES;

OXYGEN VACANCIES;

EID: 84878695831     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.05.030     Document Type: Article

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