Erratum: Enhanced H2 sensing properties of a-plane ZnO prepared on c-cut sapphire substrate by sputtering (Journal of Materials Science: Materials in Electronics DOI: 10.1007/s10854-012-0927-y)

Journal of Materials Science: Materials in Electronics

Volumn 24, Issue 6, 2013, Pages 2182-

  Vijayalakshmi, K ^a   Karthick, K ^a   Pugazhvadivu, K S ^b   Tamilarasan, K ^b  

^a BISHOP HEBER COLLEGE   (India)

^b KONGU ENGINEERING COLLEGE   (India)

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Indexed keywords

EID: 84878694357     PISSN: 09574522     EISSN: 1573482X     Source Type: Journal    
DOI: 10.1007/s10854-012-1060-7     Document Type: Erratum

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