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Physical Review Letters

Volumn 110, Issue 21, 2013, Pages

Insulating behavior at the neutrality point in single-layer graphene

(5) Amet, F a Williams, J R a Watanabe, K b Taniguchi, T b Goldhaber Gordon, D a

a STANFORD UNIVERSITY (United States)

b NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURES; NEUTRALITY POINT; PEAK RESISTIVITY; PERPENDICULAR MAGNETIC FIELDS; POWER-LAW BEHAVIOR; QUANTUM HALL STATE; SINGLE LAYER; ZERO MAGNETIC FIELDS;

GRAPHENE;

INSULATION;

EID: 84878412244 PISSN: 00319007 EISSN: 10797114 Source Type: Journal
DOI: 10.1103/PhysRevLett.110.216601 Document Type: Article

Times cited : (131)

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