Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Journal of Applied Physics

Volumn 113, Issue 19, 2013, Pages

  Yang, Yue ^a   Lu Low, Kain ^a   Wang, Wei ^a   Guo, Pengfei ^a   Wang, Lanxiang ^a   Han, Genquan ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; BANDGAP MATERIALS; DEVICE SIMULATIONS; LOW SUPPLY VOLTAGES; SIMULATION STUDIES; SUBTHRESHOLD SWING; TUNNELING FIELD-EFFECT TRANSISTORS; TUNNELING PROBABILITIES;

ENERGY GAP; FIELD EFFECT TRANSISTORS; TIN;

GERMANIUM;

EID: 84878398953     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4805051     Document Type: Article

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