Sneak-path testing of crossbar-based nonvolatile random access memories

IEEE Transactions on Nanotechnology

Volumn 12, Issue 3, 2013, Pages 413-426

  Kannan, Sachhidh ^a   Rajendran, Jeyavijayan ^a   Karri, Ramesh ^a   Sinanoglu, Ozgur ^b  

^a POLYTECHNIC UNIVERSITY   (United States)

^b NEW YORK UNIVERSITY ABU DHABI   (United Arab Emirates)

Author keywords

Memristors; nonvolatile memory (NVM); phase change memory (PCM); testing

Indexed keywords

EMERGING NON-VOLATILE MEMORY; HIGH DEFECT DENSITIES; LOW-POWER OPERATION; NANO-SCALE FABRICATION; NON-VOLATILE MEMORY; NON-VOLATILE RANDOM ACCESS MEMORY; PHASE CHANGE MEMORY (PCM); RESISTIVE RANDOM ACCESS MEMORY (RRAM);

MEMRISTORS; PHASE CHANGE MEMORY; TESTING;

RANDOM ACCESS STORAGE;

EID: 84877844855     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2013.2253329     Document Type: Article

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