Graded bandgap structure for PbS/CdS/ZnS quantum-dot-sensitized solar cells with a PbxCd1-xS interlayer

Applied Physics Letters

Volumn 102, Issue 18, 2013, Pages

  Kim, Jongmin ^a   Choi, Hongsik ^a   Nahm, Changwoo ^a   Kim, Chohui ^a   Ik Kim, Jae ^a   Lee, Woojin ^a   Kang, Suji ^a   Lee, Byungho ^a   Hwang, Taehyun ^a   Hejin Park, Helen ^b   Park, Byungwoo ^a  

^a Seoul National University   (South Korea)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CELL EFFICIENCY; ELECTRON-HOLE RECOMBINATION; EXCITON CONFINEMENT; INCIDENT PHOTON-TO-CURRENT CONVERSION EFFICIENCIES; LIGHT-HARVESTING; PBS SENSITIZERS; POWER CONVERSION EFFICIENCIES; QUANTUM-DOT-SENSITIZED SOLAR CELLS;

CADMIUM SULFIDE; CONVERSION EFFICIENCY; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; ZINC SULFIDE;

LEAD;

EID: 84877731267     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804149     Document Type: Article

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