메뉴 건너뛰기




Volumn , Issue , 2012, Pages 3225-3230

WOM codes reduce write amplification in NAND flash memory

Author keywords

[No Author keywords available]

Indexed keywords

ENCODING (SYMBOLS); MEMORY ARCHITECTURE; NAND CIRCUITS;

EID: 84877646566     PISSN: 23340983     EISSN: 25766813     Source Type: Conference Proceeding    
DOI: 10.1109/GLOCOM.2012.6503611     Document Type: Conference Paper
Times cited : (9)

References (17)
  • 1
  • 3
    • 65849353697 scopus 로고    scopus 로고
    • A survey of Flash Translation Layer
    • May
    • T.-S. Chung et al., "A survey of Flash Translation Layer", J. Syst. Archit, vol. 55, pp. 332-343, May, 2009.
    • (2009) J. Syst. Archit , vol.55 , pp. 332-343
    • Chung, T.-S.1
  • 4
    • 84877638881 scopus 로고    scopus 로고
    • Performance evaluation of the write operation in flash-based solid-state drives
    • W. Bux, "Performance evaluation of the write operation in flash-based solid-state drives", IBM Research, Zurich, Rschlikon, Rep. RZ3757, 2009.
    • (2009) IBM Research, Zurich, Rschlikon, Rep. RZ3757
    • Bux, W.1
  • 6
    • 84883127651 scopus 로고    scopus 로고
    • The fundamental limit of flash random write performance: Understanding, analysis and performance modelling
    • Mar.
    • X.-Y. Hu and R. Haas, "The fundamental limit of flash random write performance: understanding, analysis and performance modelling", IBM Research, Rep. RZ 3771, Mar. 2010.
    • (2010) IBM Research, Rep. RZ 3771
    • Hu, X.-Y.1    Haas, R.2
  • 7
    • 84859912174 scopus 로고    scopus 로고
    • An improved analytical expression for write amplification in NAND flash
    • Maui, Hawaii, USA, Jan.
    • L.J. Xiang and B. M. Kurkoski, "An improved analytical expression for write amplification in NAND flash", in Proc. Int. Conf. Computing, Networking Commun., Maui, Hawaii, USA, Jan. 2012.
    • (2012) Proc. Int. Conf. Computing, Networking Commun.
    • Xiang, L.J.1    Kurkoski, B.M.2
  • 8
    • 84863553999 scopus 로고
    • How to reuse a write - Once memory
    • R. L. Rivest and A. Shamir, "How to reuse a write - once memory", in Proc. ACM STOC, 1982, pp. 105-113.
    • (1982) Proc. ACM STOC , pp. 105-113
    • Rivest, R.L.1    Shamir, A.2
  • 9
    • 0032635971 scopus 로고    scopus 로고
    • On the capacity of generalized write-once memory with state transitions described by an arbitrary directed acyclic graph
    • Jan.
    • F.-W. Fu and A. J. Han Vinck, "On the capacity of generalized write-once memory with state transitions described by an arbitrary directed acyclic graph", IEEE Trans. Inf. Theory, vol. 45, no. 1, Jan. 1999.
    • (1999) IEEE Trans. Inf. Theory , vol.45 , Issue.1
    • Fu, F.-W.1    Han Vinck, A.J.2
  • 10
    • 41549092721 scopus 로고    scopus 로고
    • A 70 nm 16 gb 16-Level-Cell NAND ash memory
    • N. Shibata et al. "A 70 nm 16 gb 16-Level-Cell NAND ash memory", IEEE J. Solid-State Circuits, vol. 43, no. 4, pp. 929-937, 2008.
    • (2008) IEEE J. Solid-State Circuits , vol.43 , Issue.4 , pp. 929-937
    • Shibata, N.1
  • 11
    • 83655191122 scopus 로고    scopus 로고
    • Non-binary WOM-codes for multilevel flash memories
    • Oct.
    • R. Gabrys et al., "Non-binary WOM-codes for multilevel flash memories", in Inform. Theory Workshop, pp. 40-44, Oct. 2011.
    • (2011) Inform. Theory Workshop , pp. 40-44
    • Gabrys, R.1
  • 13
    • 80054807747 scopus 로고    scopus 로고
    • Characterizing capacity achieving write once memory codes for multilevel flash memories
    • Jul.
    • R. Gabrys and L. Dolecek, "Characterizing capacity achieving write once memory codes for multilevel flash memories", in Proc. 2011 IEEE Int. Symp. Inform. Theory, pp. 2517-2521, Jul. 2011.
    • (2011) Proc. 2011 IEEE Int. Symp. Inform. Theory , pp. 2517-2521
    • Gabrys, R.1    Dolecek, L.2
  • 14
    • 58149250393 scopus 로고    scopus 로고
    • A 16 Gb 3-bit per cell (X3) NAND flash memory on 56 nm technology with 8 MB/s write rate
    • Jan.
    • Y. Li et al. "A 16 Gb 3-bit per cell (X3) NAND flash memory on 56 nm technology with 8 MB/s write rate", IEEE J. Solid-State Circuits, vol. 44, no. 1, pp. 195-207, Jan. 2009.
    • (2009) IEEE J. Solid-State Circuits , vol.44 , Issue.1 , pp. 195-207
    • Li, Y.1
  • 15
    • 70349291218 scopus 로고    scopus 로고
    • A 113mm2 32Gb 3b/cell NAND flash memory
    • Feb.
    • T. Futatsuyama et al., "A 113mm2 32Gb 3b/cell NAND flash memory", in IEEE Int. Solid-State Circuits Conf., pp. 242-243, Feb. 2009.
    • (2009) IEEE Int. Solid-State Circuits Conf. , pp. 242-243
    • Futatsuyama, T.1
  • 16
    • 70349271258 scopus 로고    scopus 로고
    • A 5.6MB/s 64Gb 4b/cell NAND flash memory in 43nm CMOS
    • Feb.
    • C. Trinh and N. Shibata et al., "A 5.6MB/s 64Gb 4b/cell NAND flash memory in 43nm CMOS", in IEEE Int. Solid-State Circuits Conf., pp. 246-247, Feb. 2009.
    • (2009) IEEE Int. Solid-State Circuits Conf. , pp. 246-247
    • Trinh, C.1    Shibata, N.2
  • 17
    • 85184290574 scopus 로고    scopus 로고
    • The effect of TRIM requests on write amplification in solid state drives
    • Baltimore, MD, USA, May
    • T. Frankie et al., "The effect of TRIM requests on write amplification in solid state drives", in Seventh Int. Conf. Commun., Internet, Inform. Technology, Baltimore, MD, USA, May, 2012.
    • (2012) Seventh Int. Conf. Commun., Internet, Inform. Technology
    • Frankie, T.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.