Pressure-driven enhancement of topological insulating state in tin telluride

Journal of Physical Chemistry C

Volumn 117, Issue 16, 2013, Pages 8437-8442

  Zhou, Dan ^a,b   Li, Quan ^a,b   Ma, Yanming ^a   Cui, Qiliang ^a   Chen, Changfeng ^b  

^a JILIN UNIVERSITY   (China)

^b UNIVERSITY OF NEVADA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BONDING INTERACTIONS; CHARGE REDISTRIBUTION; ELECTRONIC BAND GAPS; ELECTRONIC BAND STRUCTURE; ELECTRONIC TOPOLOGICAL TRANSITION; FIRST-PRINCIPLES CALCULATION; NARROW BAND GAP SEMICONDUCTORS; SOFT-OPTICAL PHONONS;

CALCULATIONS; ELECTRONIC PROPERTIES; ENERGY GAP; FERMI SURFACE; INSULATION; TIN;

TOPOLOGY;

EID: 84876856170     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp401928j     Document Type: Article

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