A new spin gapless semiconductors family: Quaternary Heusler compounds

EPL

Volumn 102, Issue 1, 2013, Pages

  Xu, G Z ^a   Liu, E K ^a   Du, Y ^a   Li, G J ^a   Liu, G D ^b   Wang, W H ^a   Wu, G H ^a  

^a INSTITUTE OF PHYSICS   (China)

^b HEBEI UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84876751124     PISSN: 02955075     EISSN: 12864854     Source Type: Journal    
DOI: 10.1209/0295-5075/102/17007     Document Type: Article

References (28)

1. Wang X.L. 2008 Phys. Rev. Lett. 100 156404
2. Wang X.L., Peleckis G., Zhang C., Kimura H. and Dou S.X. 2009 Adv. Mater. 21 2196
3. Tsidilkovski Isaak M. 1996 Electron Spectrum of Gapless Semiconductors Springer Ser. Solid-State Sci. 116 ed Klaus von Klitzing references therein
4. de Groot R.A. and Mueller F.M. 1983 Phys. Rev. Lett. 50 2024
5. Novoselov K.S., Geim A.K., Morozov S.V., Jiang D., Zhang Y., Dubonos S.V., Grigorieva I.V. and Firsov A.A. 2004 Science 306 666
6. Li Y.F., Zhou Z., Shen P.W. and Chen Z.F. 2009 ACS Nano 3 1952
7. Pan Y. and Yang Z. 2010 Phys. Rev. B 82 195308
8. Guo S.D. and Liu B.G. 2012 J. Phys.: Condens. Matter 24 045502
9. Ouardi S., Fecher G.H. and Felser C. 2013 Phys. Rev. Lett. 110 100401
10. Skaftouros S., Ozdogan K., Sasioglu E. and Galanakis I. 2013 Appl. Phys. Lett. 102 022402
11. Liu G.D., Dai X.F., Liu H.Y., Chen J.L., Li Y.X., Xiao G. and Wu G.H. 2008 Phys. Rev. B 77 014424
12. Heusler F. 1903 Verh. Dtsch. Phys. Ges. 5 219
13. Graf T., Felser C. and Parkin S. S.P. 2011 Prog. Solid State Chem. 39 1
14. Eberz U., Seelentag W. and Schuster H.U. 1980 Z. Naturforsch. B 35 1341
15. Alijani V. et al 2011 Phys. Rev. B 84 224416
16. Gao G.Y., Hu L., Yao K.L., Luo B. and Liu N. 2013 J. Alloys Compd. 551 539
17. Payne M.C., Teter M.P., Allan D.C., Arias T.A. and Joannopoolous J.D. 1992 Rev. Mod. Phys. 64 1065
18. Segall M.D., Lindan P. L.D., Probert M.J., Pickard C.J., Hasnip P.J., Clark S.J. and Payne M.C. 2002 J. Phys.: Condens. Matter 14 2717
19. Meinert M., Friedrich C., Reiss G. and Blügel S. 2012 Phys. Rev. B 86 245115
20. Sakuraba Y., Takanashi K., Kota Y., Kubota T., Oogane M., Sakuma A. and Ando Y. 2010 Phys. Rev. B 81 144422
21. Perdew J.P., Burke K. and Ernzerhof M. 1996 Phys. Rev. Lett. 77 3865
22. Dai X.F., Liu G.D., Fecher G.H., Felser C., Li Y.X. and Liu H.Y. 2009 J. Appl. Phys. 105 07E901
23. Williams A.R., Moruzzi V.I., Malozemoff A.P. and Terakura K. 1983 IEEE Trans. Magn. 19 1983
24. Galanakis I., Dederichs P. and Papanikolaou N. 2002 Phys. Rev. B 66 174429
25. Galanakis I., Mavropoulos P. and Dederichs P.H. 2006 J. Phys. D: Appl. Phys. 39 765
26. Galanakis I., Dederichs P. and Papanikolaou N. 2002 Phys. Rev. B 66 134428
27. Fujii Shinpei, Ishida Shoji and Asano Setsuro 1995 J. Phys. Soc. Jpn. 64 185
28. Rai D.P. et al 2010 Indian J. Phys. 84 717