SCOPUS 정보 검색 플랫폼

Volumn 5, Issue 9, 2013, Pages 3654-3659

Atomistic simulations of highly conductive molecular transport junctions under realistic conditions

(6) French, William R a Iacovella, Christopher R a Rungger, Ivan b Souza, Amaury Melo b Sanvito, Stefano b Cummings, Peter T a,c

a Department of Chemical and Biomolecular Engineering ^* (United States)

b TRINITY COLLEGE DUBLIN (Ireland)

c OAK RIDGE NATIONAL LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMISTIC SIMULATIONS; CONDUCTANCE HISTOGRAMS; LONG SIMULATION TIME; MOLECULAR ELECTRONIC DEVICE; MOLECULAR TRANSPORT JUNCTIONS; REALISTIC CONDITIONS; STRUCTURAL CHANGE; THERMAL FLUCTUATIONS;

MATERIALS PROPERTIES; NANOSTRUCTURED MATERIALS;

ELECTRONIC STRUCTURE;

EID: 84876728580 PISSN: 20403364 EISSN: 20403372 Source Type: Journal
DOI: 10.1039/c3nr00459g Document Type: Article

Times cited : (43)

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