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Volumn 9, Issue 3, 1986, Pages 242-251

Design Considerations in High Temperature Analog CMOS Integrated Circuits

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Indexed keywords


EID: 84876716278     PISSN: 01486411     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCHMT.1986.1136646     Document Type: Article
Times cited : (122)

References (20)
  • 2
    • 0019698649 scopus 로고
    • Matching properties, and voltage and temperature dependence of MOS capacitors
    • Dec.
    • J. L. McCreary, “Matching properties, and voltage and temperature dependence of MOS capacitors,” IEEE J. Solid-State Circuits, vol. SC-16, pp. 608–616, Dec. 1981.
    • (1981) IEEE J. Solid-State Circuits , vol.SC-16 , pp. 608-616
    • McCreary, J.L.1
  • 3
    • 0021387284 scopus 로고
    • Electrical characteristics of large-scale integration silicon MOSFET's at very high temperatures, Part III: Modeling and circuit behavior
    • Mar.
    • F. S. Shoucair, W. Hwang, and P. Jain, “Electrical characteristics of large-scale integration silicon MOSFET's at very high temperatures, Part III: Modeling and circuit behavior,” IEEE Trans. Components, Hybrids, Manuf. Technol., vol. CHMT-7, pp. 146–153, Mar. 1984.
    • (1984) IEEE Trans. Components, Hybrids, Manuf. Technol. , vol.CHMT-7 , pp. 146-153
    • Shoucair, F.S.1    Hwang, W.2    Jain, P.3
  • 4
    • 0041654381 scopus 로고
    • High-temperature diffusion leakage-current-dependent MOSFET small signal conductance
    • Dec.
    • F. S. Shoucair and J. M. Early, “High-temperature diffusion leakage-current-dependent MOSFET small signal conductance,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1866–1872, Dec. 1984.
    • (1984) IEEE Trans. Electron Devices , vol.ED-31 , pp. 1866-1872
    • Shoucair, F.S.1    Early, J.M.2
  • 7
    • 0021197310 scopus 로고
    • Problems in precision modeling of the MOS transistor for analog applications
    • Jan.
    • Y. P. Tsividis and G. Masetti, “Problems in precision modeling of the MOS transistor for analog applications,” IEEE Trans. Computer-aided Design, vol. CAD-3, pp.,72–79, Jan. 1984.
    • (1984) IEEE Trans. Computer-aided Design , vol.CAD-3 , pp. 72-79
    • Tsividis, Y.P.1    Masetti, G.2
  • 8
    • 0017983253 scopus 로고
    • Design considerations in single-channel MOS analog integrated circuits—A tutorial
    • June
    • Y. P. Tsividis, “Design considerations in single-channel MOS analog integrated circuits—A tutorial,” IEEE J. Solid-State Circuits, vol. SC-13, pp. 383–391, June 1978.
    • (1978) IEEE J. Solid-State Circuits , vol.SC-13 , pp. 383-391
    • Tsividis, Y.P.1
  • 9
    • 0011179372 scopus 로고
    • Basic MOS operational amplifier design—An overview
    • P. R. Gray, “Basic MOS operational amplifier design—An overview, ” IEEE Press Selected Reprint Series, pp. 28–49, 1980.
    • (1980) IEEE Press Selected Reprint Series , pp. 28-49
    • Gray, P.R.1
  • 11
    • 84910768198 scopus 로고
    • Electrical characteristics of LSI silicon MOSFETs at very high temperatures
    • Ph.D. dissertation, Columbia Univ., New York, NY
    • F. S. Shoucair, “Electrical characteristics of LSI silicon MOSFETs at very high temperatures,” Ph.D. dissertation, Columbia Univ., New York, NY, 1983.
    • (1983)
    • Shoucair, F.S.1
  • 14
    • 0022663165 scopus 로고
    • Small signal drain conductance of the MOSFET in the saturation region—A simple model
    • Feb. 27
    • F. S. Shoucair, “Small signal drain conductance of the MOSFET in the saturation region—A simple model,” Electron. Lett., vol. 22, pp. 239–241, Feb. 27, 1986.
    • (1986) Electron. Lett. , vol.22 , pp. 239-241
    • Shoucair, F.S.1
  • 18
    • 0017790762 scopus 로고
    • High temperature MOSFET characteristics for geothermal instrumentation
    • J. L. Prince, D. B. Bullard, K. R. Infinger, and J. W. Lathrop, “High temperature MOSFET characteristics for geothermal instrumentation,” in Proc. SOUTHEASTCON, 1979, pp. 376–379.
    • (1979) Proc. SOUTHEASTCON , pp. 376-379
    • Prince, J.L.1    Bullard, D.B.2    Infinger, K.R.3    Lathrop, J.W.4
  • 19
    • 0018735589 scopus 로고
    • Integrated circuit characteristics at 260 C for aircraft engine-control applications
    • Dec.
    • L. J. Palkuti, J. L. Prince, and A. S. Glista, Jr., “Integrated circuit characteristics at 260 C for aircraft engine-control applications,” IEEE Trans. Components, Hybrids, Manuf. Technol., vol. CHMT-2, pp. 405–412, Dec. 1979.
    • (1979) IEEE Trans. Components, Hybrids, Manuf. Technol. , vol.CHMT-2 , pp. 405-412
    • Palkuti, L.J.1    Prince, J.L.2    Glista, A.S.3
  • 20
    • 0021290968 scopus 로고
    • Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures
    • 487–510
    • F. Shoucair, W. Hwang, and P. Jain, “Electrical characteristics of large scale integration (LSI) MOSFETs at very high temperatures,” Parts I and II, Microelectron. Rel., vol. 24, pp. 465–85, 487–510, 1984.
    • (1984) Parts I and II, Microelectron. Rel. , vol.24 , pp. 465-485
    • Shoucair, F.1    Hwang, W.2    Jain, P.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.