Structural study on phosphorus doping of BaSi2 epitaxial films by ion implantation

Thin Solid Films

Volumn 534, Issue , 2013, Pages 470-473

  Hara, K O ^a,b   Hoshi, Y ^a   Usami, N ^a,b   Shiraki, Y ^c   Nakamura, K ^d   Toko, K ^d   Suemasu, T ^b,d  

^a TOHOKU UNIVERSITY   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

^c TOKYO CITY UNIVERSITY   (Japan)

^d UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

Barium disilicide; Epitaxial film; Impurity doping; Ion implantation; Phosphorus impurity; Segregation

Indexed keywords

ANNEALING TEMPERATURES; DISILICIDES; IMPURITY DOPING; IRRADIATION DAMAGE; PHOSPHORUS DOPING; SECONDARY ION MASS SPECTROSCOPY; SEMICONDUCTOR FILMS; STRUCTURAL STUDIES;

EPITAXIAL FILMS; EPITAXIAL GROWTH; ION IMPLANTATION; IRRADIATION; PHOSPHORUS; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SECONDARY ION MASS SPECTROMETRY; SEGREGATION (METALLOGRAPHY); SURFACE SEGREGATION; X RAY DIFFRACTION;

SEMICONDUCTOR DOPING;

EID: 84876691493     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2013.02.014     Document Type: Article

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