Single-photon detection efficiency up to 50 at 1310 nm with an InGaAs/InP avalanche diode gated at 1.25 GHz

Applied Physics Letters

Volumn 102, Issue 14, 2013, Pages

  Restelli, Alessandro ^a   Bienfang, Joshua C ^a,b   Migdall, Alan L ^a,b  

^a UNIVERSITY OF MARYLAND   (United States)

^b NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLITUDE AND PHASE CONTROL; COHERENT ADDITION; DETECTION EFFICIENCY; DETECTION SYSTEM; GATE FREQUENCIES; LOW THRESHOLDS; SINGLE PHOTON AVALANCHE DIODE; SINGLE-PHOTON DETECTION EFFICIENCIES;

PROBABILITY;

EFFICIENCY;

EID: 84876353573     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4801939     Document Type: Article

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