Radically extending the cycling endurance of Flash memory (to > 100M Cycles) by using built-in thermal annealing to self-heal the stress-induced damage

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Lue, Hang Ting ^a   Du, Pei Ying ^a   Chen, Chih Ping ^a   Chen, Wei Chen ^a   Hsieh, Chih Chang ^a   Hsiao, Yi Hsuan ^a   Shih, Yen Hao ^a   Lu, Chih Yuan ^a  

^a MACRONIX INTERNATIONAL CO LTD   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CYCLING ENDURANCE; EXTREME TEMPERATURES; NOVEL TECHNIQUES; REAL-TIME OPERATION; STRESS-INDUCED DAMAGE; STRONG ELECTRIC FIELDS; THERMAL-ANNEALING; TUNNEL OXIDE DEGRADATION;

ANNEALING; ELECTRIC FIELDS; ELECTRON DEVICES; REPAIR;

FLASH MEMORY;

EID: 84876140129     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479008     Document Type: Conference Paper

References (4)

1. N. Mielke, H. P. Belgal, A. Fazio, Q. Meng, and N. Righos," Recovery Effects in the Distributed Cycling of Flash Memories", IRPS 2006, pp. 29-35.
2. C. Monzio Compagnoni, C. Miccoli, R. Mottadelli, S. Beltrami, M. Ghidotti, A. L. Lacaita, A. S. Spinelli, and A. Visconti, "Investigation of the Threshold Voltage Instability after Distributed Cycling in Nanoscale NAND Flash Memory Arrays", IRPS 2010, pp. 604-610.
3. Q. Wu, G. Dong and T. Zhang," A First Study on Self-Healing Solid-State Drives", IMW, 2011, pp. 34-37.
4. C.C. Hsieh, H.T. Lue, K.P. Chang, Y.H. Hsiao, T.H. Hsu, C.P. Chen, Y.J. Chen, K.F. Chen, Chester Lo, T.T. Han, M.S. Chen, W.P. Lu, S.Y. Wang, J.H. Liao, S.P. Hong, F.H. Hsu, Tahone Yang, K.C. Chen, K.Y. Hsieh, and C.Y. Lu , "A Novel BE-SONOS NAND Flash Using Non-cut Trapping Layer with Superb Reliability", International Electron Device Meeting (IEDM), session 5-5, pp. 114-117 , 2010.