Optimized spin relaxation length in few layer graphene at room temperature

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Gao, Yunfei ^a   Kubo, Yuri J ^a   Lin, Chia Ching ^a   Chen, Zhihong ^a   Appenzeller, Joerg ^a  

^a PURDUE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FEW-LAYER GRAPHENE; LOW POWER APPLICATION; OPTIMUM PERFORMANCE; ROOM TEMPERATURE; SPIN RELAXATION; SPIN-BASED DEVICES;

ELECTRON DEVICES;

GRAPHENE;

EID: 84876134630     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6478978     Document Type: Conference Paper

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