Graphene oxide gate dielectric for graphene-based monolithic field effect transistors

Applied Physics Letters

Volumn 102, Issue 13, 2013, Pages

  Eda, Goki ^a,d   Nathan, Arokia ^b,e   Wöbkenberg, Paul ^a   Colleaux, Florian ^a   Ghaffarzadeh, Khashayar ^b   Anthopoulos, Thomas D ^a   Chhowalla, Manish ^c  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

^c The State University of New Jersey   (United States)

^d NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^e UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC COMPONENTS; ELECTRICAL ANISOTROPY; FIELD EFFECT TRANSISTOR (FETS); GRAPHENE OXIDES; HYDROGEN PLASMAS;

DIELECTRIC PROPERTIES; FIELD EFFECT TRANSISTORS; GATE DIELECTRICS; GRAPHENE; THIN FILMS;

HETEROJUNCTIONS;

EID: 84876113715     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4799970     Document Type: Article

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