High-K metal gate contact RRAM (CRRAM) in pure 28nm CMOS logic process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Shen, Wen Chao ^a   Mei, Chin Yu ^a   Chih, Y D ^b   Sheu, Shyh Shyuan ^c   Tsai, Ming Jinn ^c   King, Ya Chin ^a   Lin, Chrong Jung ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

^b TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^c INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DATA RETENTION; FULLY COMPATIBLE; HIGH TEMPERATURE; HIGH-K METAL GATES; MANUFACTURING PROCESS; RESET CURRENTS; RESISTIVE CONTACTS; STABLE OPERATION;

CELLS; CYTOLOGY; ELECTRON DEVICES;

RANDOM ACCESS STORAGE;

EID: 84876112832     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479146     Document Type: Conference Paper

References (8)

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