Impact of free charges on polarization and pyroelectricity in antiferrodistortive structures and surfaces induced by a flexoelectric effect

Ferroelectrics

Volumn 438, Issue 1, 2012, Pages 32-44

  Morozovska, A N ^a   Eliseev, E A ^b   Glinchuk, M D ^b   Chen, Long Qing ^c   Kalinin, S V ^d   Gopalan, V ^c  

^a INSTITUTE OF HYDROBIOLOGY   (Ukraine)

^b FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

^d OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

Antiferrodistortive phase; Antiphase and twin boundaries; Flexoelectric effect

Indexed keywords

ANTIFERRODISTORTIVE; ANTIPHASE BOUNDARIES; FLEXOELECTRIC EFFECTS; FLEXOELECTRICITY; LANDAU-GINZBURG-DEVONSHIRE THEORY; PYROELECTRIC COEFFICIENTS; SPONTANEOUS POLARIZATIONS; TWIN BOUNDARIES;

CRYSTALLOGRAPHY; FERROELECTRICITY; PYROELECTRICITY; STRONTIUM TITANATES;

POLARIZATION;

EID: 84875911405     PISSN: 00150193     EISSN: 15635112     Source Type: Journal    
DOI: 10.1080/00150193.2012.744257     Document Type: Conference Paper

References (36)

1. E. A. Eliseev, A. N. Morozovska, M. D. Glinchuk, B. Y. Zaulychny, V. V. Skorokhod, and R. Blinc, Surface-induced piezomagnetic, piezoelectric, and linear magnetoelectric effects in nanosystems. Phys. Rev. B 82, 085408 (2010).
2. D. A. Tenne, A. Bruchhausen, N. D. Lanzillotti-Kimura, A. Fainstein, R. S. Katiyar, A. Cantarero, A. Soukiassian, V. Vaithyanathan, J. H. Haeni, W. Tian, D. G. Schlom, K. J. Choi, D. M. Kim, C. B. Eom, H. P. Sun, X. Q. Pan, Y. L. Li, L.-Q. Chen, Q. X. Jia, S. M. Nakhmanson, K. M. Rabe, and X. X. Xi, Probing nanoscale ferroelectricity by ultraviolet raman spectroscopy. Science 313, 1614-1616 (2006).
3. E. V. Bursian, and O. I. Zaikovskii, Changes in the curvature of a ferroelectric film due to polarization. Fiz Tverd. Tela. 10, 1413 (1968)
4. [Sov. Phys. Solid State 10, 1121 (1968)];
5. E.V. Bursian, O.I. Zaikovsky, and K.V. Makarov, Polarization of ferroelectric film by bending and bending deformation in the electric field. J. Phys. Soc. Jpn. 28, Suppl. 416 (1970).
6. W. Ma, and L. E. Cross, Large flexoelectric polarization in ceramic lead magnesium niobate. Appl. Phys. Lett. 79, 4420 (2001).
7. W. Ma, and L. E. Cross, Flexoelectricity of barium titanate. Appl. Phys. Lett. 88, 232902 (2006).
8. 3 from first principles. Phys. Rev. B 72, 100103(R) (2005).
9. N. A. Benedek, and C. J. Fennie, Improper ferroelectricity: A mechanism for controllable polarization-magnetization coupling. Phys. Rev. Lett. 106, 107204 (2011).
10. 3. Phys. Rev. Lett. 101, 097602 (2008).
11. 3 by electron microscopy. Adv. Mater. 24, 523-527 (2012).
12. E. Bousquet, M. Dawber, N. Stucki, C. Lichtensteiger, P. Hermet, S. Gariglio, J.-M. Triscone, and P. Ghosez, Improper ferroelectricity in perovskite oxide artificial superlattices. Nature 452, 732 (2008).
13. A. K. Tagantsev, Piezoelectricity and flexoelectricity in crystalline dielectrics. Phys. Rev. B 34, 5883-5889 (1986).
14. V. Gopalan, and D. B. Litvin, Rotation-reversal symmetries in crystals and handed structures. Nat. Mater. 10, 376-381 (2011).
15. M. S. Majdoub, P. Sharma, and T. Cagin, Enhanced size-dependent piezoelectricity and elasticity in nanostructures due to the flexoelectric effect. Phys. Rev. B 77, 125424 (2008).
16. G. Catalan, B. Noheda, J. McAneney, L. J. Sinnamon, and J. M. Gregg, Strain gradients in epitaxial ferroelectrics. Phys. Rev. B 72, 020102 (2005).
17. E. A. Eliseev, A. N. Morozovska, M. D. Glinchuk, and R. Blinc, Spontaneous flexoelectric/flexomagnetic effect in nanoferroics. Phys. Rev. B 79, 165433 (2009).
18. D. Lee, A. Yoon, S. Y. Jang, J.-G. Yoon, J.-S. Chung, M. Kim, J. F. Scott, and T. W. Noh, Giant flexoelectric effect in ferroelectric epitaxial thin films. Phys. Rev. Lett. 107, 057602 (2011).
19. I. Ponomareva, A. K. Tagantsev, and L. Bellaiche, Finite-temperature flexoelectricity in ferroelectric thin films from first principles. Phys. Rev. B 85, 104101 (2012).
20. T. A. Aslanian, and A. P. Levanyuk, On the possibility of the incommensurate phase near α ↔ β transition point in quartz. Pis'ma Zh. Eksp. Teor. Fiz. 28, 76, (1978).
21. [Soviet Phys. JETP Lett. 28, 70, (1978).]
22. B. Houchmanzadeh, J. Lajzerowicz, and E. Salje, Interfaces and ripple states in ferroelastic crystals - A simple model. Phase Trans. 38, 77 (1992).
23. B. Houchmanzadeh, J. Lajzerowicz, and E. Salje, Order parameter coupling and chirality of domain walls. J. Phys.: Condens. Matter3, 5163 (1991).
24. M. Daraktchiev, G. Catalan, and J. F. Scott, Landau theory of ferroelectric domain walls in magnetoelectrics. Ferroelectrics 375, 122 (2008).
25. A. K. Tagantsev, E. Courtens, and L. Arzel, Prediction of a low-temperature ferroelectric instability in antiphase domain boundaries of strontium titanate. Phys. Rev. B 64, 224107 (2001).
26. 3 single crystals. Phys. Rev. Lett. 99, 167601 (2007).
27. 3: evidence for polar twin walls. Phys. Rev. Lett. (2012) (to be published).
28. A. N. Morozovska, E. A. Eliseev, M. D. Glinchuk, L.-Q. Chen, and V. Gopalan, Interfacial polarization and pyroelectricity in antiferrodistortive structures induced by a flexoelectric effect and rotostriction. Phys. Rev. B 85, 094107 (2012).
29. A. N. Morozovska, E. A. Eliseev, S. V. Kalinin, L.-Q. Chen, and V. Gopalan, Surface polar states and pyroelectricity in ferroelastics induced by flexo-roto field. Appl. Phys. Lett 100, 142902 (2012).
30. 3 films. J. Appl. Phys. 112, 064111 (2012).
31. 3. Phys. Rev. 174, 613 (1968).
32. 3. Phys. Rev. Lett. 21, 16-19 (1968).
33. M. J. Haun, E. Furman, T. R. Halemane, and L. E. Cross, Thermodynamic theory of the lead zirconate-titanate solid solution system, part IV: Tilting of the oxygen octahedra. Ferroelectrics 99, 13 (1989).
34. R. Moos, W. Mcnesklou, and K. H. Hardtl, Hall mobility of undoped n-type conducting strontium titanate single crystals between 19 K and 1373 K. Appl. Phys. A 61, 389 (1995).
35. 3 ceramics. J. Appl. Phys. 80, 393 (1996).
36. E. A. Eliseev, A. N. Morozovska, G. S. Svechnikov, V. Gopalan, and V. Y. Shur, Static conductivity of charged domain walls in uniaxial ferroelectric semiconductors. Phys. Rev. B 83, 235313 (2011).