The adsorption-controlled growth of LuFe2O4 by molecular-beam epitaxy

Applied Physics Letters

Volumn 101, Issue 13, 2012, Pages

  Brooks, Charles M ^a,b   Misra, Rajiv ^b   Mundy, Julia A ^a   Zhang, Lei A ^b   Holinsworth, Brian S ^c   O'Neal, Kenneth R ^c   Heeg, Tassilo ^a   Zander, Willi ^d   Schubert, J ^d   Musfeldt, Janice L ^c   Liu, Zi Kui ^b   Muller, David A ^a   Schiffer, Peter ^b   Schlom, Darrell G ^a  

^a School of Operations Research and Industrial Engineering   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c UNIVERSITY OF TENNESSEE   (United States)

^d FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIRECT BAND GAP; FILM STOICHIOMETRY; FILM-SUBSTRATE INTERFACES; GROWTH PROCESS; INDIRECT BAND GAP; OPTICAL SPECTROSCOPY; SCANNING TRANSMISSION ELECTRON MICROSCOPY; SIC SUBSTRATES;

ADSORPTION; ENERGY GAP; EPITAXIAL FILMS; EPITAXIAL GROWTH; INTERFACES (MATERIALS); SILICON CARBIDE; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY;

FILM GROWTH;

EID: 84875828884     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4755765     Document Type: Article

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