Density of surface states at CdSe quantum dots by fitting of temperature-dependent surface photovoltage transients with random walk simulations

Journal of Physical Chemistry C

Volumn 117, Issue 12, 2013, Pages 6462-6468

  Fengler, Steffen ^a   Zillner, Elisabeth ^a   Dittrich, Thomas ^a  

^a HAHN MEITNER INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE RELAXATION; ELECTRONIC SURFACE STATE; ENERGY DISTRIBUTIONS; INDIUM TIN OXIDE SUBSTRATES; MULTI-PARAMETER FITTING; RANDOM WALK SIMULATION; SURFACE PHOTOVOLTAGES; TEMPERATURE DEPENDENT;

ELECTRIC POWER DISTRIBUTION; HOLE TRAPS; MONOLAYERS; SEMICONDUCTOR QUANTUM DOTS; SEPARATION; SURFACE PROPERTIES; SURFACE STATES; TIN OXIDES;

TRANSIENTS;

EID: 84875739341     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp4002687     Document Type: Article

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