Performance prediction of an electroabsorption modulator at 1550 nm using GeSn/SiGeSn Quantum Well structure

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 50, Issue , 2013, Pages 67-72

  Chakraborty, Vedatrayee ^a   Mukhapadhyay, Bratati ^a   Basu, P K ^a  

^a UNIVERSITY OF CALCUTTA   (India)

Author keywords

Electroabsorption; Electrorefraction; Exciton; Quantum confined stark effect Si based modulator

Indexed keywords

ELECTRO-ABSORPTION; ELECTROREFRACTION; EXTINCTION COEFFICIENTS; PERFORMANCE PARAMETERS; PERFORMANCE PREDICTION; QUANTUM WELL STRUCTURES; SHORT PULSE GENERATION; SI-BASED;

CHIRP MODULATION; EXCITONS; GERMANIUM; PULSE GENERATORS; REFRACTIVE INDEX; SEMICONDUCTOR QUANTUM WELLS; SILICON; TIN;

ELECTROABSORPTION MODULATORS;

EID: 84875712243     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2013.02.023     Document Type: Article

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