Crystal growth and electronic properties of a 3D Rashba material, BiTeI, with adjusted carrier concentrations

Journal of Physics Condensed Matter

Volumn 25, Issue 13, 2013, Pages

  Kanou, Manabu ^a   Sasagawa, Takao ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED RESEARCH; BRIDGMAN; FERMI SURFACE TOPOLOGY; FIRST-PRINCIPLES CALCULATION; INSULATING STATE; UNCONVENTIONAL SUPERCONDUCTIVITY; VAPOUR TRANSPORT;

CALCULATIONS; CARRIER CONCENTRATION; CRYSTAL GROWTH; ELECTRONIC PROPERTIES; ELECTRONIC STATES; INSULATION; SPIN HALL EFFECT; TOPOLOGY;

THREE DIMENSIONAL COMPUTER GRAPHICS;

EID: 84875145837     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/25/13/135801     Document Type: Article

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