Competition of epitaxy and ion beam irradiation-determined texture during ion beam-assisted deposition of gallium nitride films on r-plane sapphire

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 161-165

  Gerlach, J W ^a   Sienz, S ^a   Attenberger, W ^b   Rauschenbach, B ^a  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

^b Institut für Physik ^*  (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; ION BEAMS; ION BOMBARDMENT; IONS; NITRIDES; SAPPHIRE; TEXTURES; THIN FILMS; WIDE BAND GAP SEMICONDUCTORS;

BEAM PARAMETER; CRYSTALLOGRAPHIC TEXTURES; GALLIUM NITRIDE FILMS; GALLIUM NITRIDE THIN FILM; GAN FILM; ION BEAM IRRADIATION; NITROGEN ION BEAM; PLANE SAPPHIRE;

ION BEAM ASSISTED DEPOSITION;

EID: 84875107928     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390013     Document Type: Conference Paper

References (8)

1. T. D. Moustakas, T. Lei, and R. J. Molnar, Physica B 185, 36 (1993).
2. R. C. Powell, N.-E. Lee, Y.-W. Kim, and J. E. Greene, J. Appl. Phys. 73, 189 (1993).
3. L. Liu and J. H. Edgar, Mater. Sci. Eng. R37, 61 (2002).
4. C.-J. Sun and M. Razeghi, Appl. Phys. Lett. 63, 973 (1993).
5. J. W. Gerlach, D. Schrupp, R. Schwertberger, B. Rauschenbach, and A. Anders, Mater. Res. Soc. Symp. Proc. 585, 239 (2000).
6. A. N. Efimov, A. O. Lebedev, and A. M. Tsaregorodtsev, J. Appl. Cryst. 31, 461 (1998).
7. M. P. Callaghan, E. Patterson, B. P. Richards, and C. A. Wallace, J. Cryst. Growth 22, 85 (1974).
8. R. M. Bradley and J. M. E. Harper, J. Appl. Phys. 60, 4160 (1986).