Ultraviolet Raman and optical transmission studies of RF sputtered indium nitride

Physica Status Solidi C: Conferences

Volumn , Issue 1, 2002, Pages 373-376

  Butcher, K S A ^a   Dou, H ^a   Goldys, E M ^a   Tansley, T L ^a   Srikeaw, S ^b  

^a MACQUARIE UNIVERSITY   (Australia)

^b PRINCE OF SONGKLA UNIVERSITY   (Thailand)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM NITRIDE; CHLORINE COMPOUNDS; ENERGY GAP; ETCHING; III-V SEMICONDUCTORS; LIGHT TRANSMISSION; NITRIDES; WIDE BAND GAP SEMICONDUCTORS;

ABSORPTION MEASUREMENTS; EX SITU; GROWTH SYSTEMS; INDIUM NITRIDE; SIGNAL STRENGTHS; SPUTTERED MATERIALS; SURFACE OXIDE; UV-RAMAN;

INDIUM COMPOUNDS;

EID: 84875100380     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200390066     Document Type: Conference Paper

References (6)

1. T. L. Tansley and C. P. Foley, Electron. Lett. 20, 1066 (1984).
2. K. S. A. Butcher, M. Wintrebert-Fouquet, P. P.-T. Chen, T. L. Tansley, and S. Srikeaw, Mater. Res. Soc. Symp. Proc. 693, 16.9.1. (2002).
3. C. P. Foley and T. L. Tansley, Appl. Surf. Sci. 22/23, 663 (1985).
4. C. P. Foley, Indium Nitride Polycrystalline Thin Films, PhD Thesis, Macquarie University, Sydney 1984.
5. M. Rojas-Lopez, J. Nieto-Navarro, E. Rosendo, H. Navarro-Contreras, and M. A. Vidal, Thin Solid Films 379, 1 (2000).
6. C. Wetzel and I. Akasaki, Raman and IR Studies of InN, in: Properties, Processing and Applications of Gallium Nitride and Related Semiconductors, INSPEC, London 1999 (pp. 121-122).