Chemical 3D tomography of 28nm high K metal gate transistor: STEM XEDS experimental method and results

Micron

Volumn 47, Issue , 2013, Pages 43-49

  Lepinay, K ^a,b   Lorut, F ^a   Pantel, R ^a   Epicier, T ^b  

^a STMICROELECTRONICS   (France)

^b UNIVERSITÉ DE LYON   (France)

Author keywords

3D; EDX; Semiconductor; STEM; Tomography; Transistor; XEDS

Indexed keywords

3-D TOMOGRAPHIES; 3D; EXPERIMENTAL METHODS; HIGH-K METAL GATES; OVERLAP EFFECT; STEM; XEDS;

ENERGY DISPERSIVE SPECTROSCOPY; SEMICONDUCTOR MATERIALS; THREE DIMENSIONAL COMPUTER GRAPHICS; TOMOGRAPHY;

TRANSISTORS;

EID: 84875097382     PISSN: 09684328     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.micron.2013.01.004     Document Type: Article

References (14)

1. Anderson A.H., Kak A.C. Simultaneous algebraic reconstruction technique (SART): a superior implementation of the art algorithm. Ultrasonic Imaging 1984, 6:81-94.
2. Frank J. Electron Tomography: Methods for Three-Dimensional Visualization of Structures in the Cell 2006, Springer, New York. 2nd ed.
3. Genç A., Cheng H., Winterstein J., Pullan L., Freitag B. 3D chemical mapping using tomography with an Enhanced XEDS system. Microscopy and Analysis 2012, 26(2):23-25. (EU).
4. Gilbert P. Iterative methods for the three-dimensional reconstruction of an object from projections. Journal of Theoretical Biology 1972, 36:105-117.
5. Kotula P.G., Brewer L.N., Michael J.R., Giannuzzi L.A. Computed tomographic spectral imaging: 3D STEM-EDS spectral imaging. Microscopy and Microanalysis 2007, 13(Suppl 2):1324-1325.
6. Lorut F., Delille D. Advanced FIB-based sample preparation for 3D characterization of 45nm IC's. Microscopy and Microanalysis 2008, 14(Suppl. 2):1002-1003.
7. Möbus G. Spectroscopic electron tomography. Ultramicroscopy 2003, 96:433-451.
8. Servanton, G., Delille, D., Klenov, D.O., 2010. High brightness electron source and large collection angle EDX SDD detectors: a solution for fast elemental traces analysis and dopant mapping in silicon devices using the new Osiris TEM Poster at IMC2010.
9. Robertson J. High dielectric constant gate oxides for metal oxide Si transistors. Reports on Progress in Physics 2006, 69:p327.
10. Saghi Z., Xu X., Peng Y., Inkson B., Mobus G. Three-dimensional chemical analysis of tungsten probes by energy dispersive X-ray nanotomography. Applied Physics Letters 2007, 91:p.251906.
11. Schlossmacher P., Klenov D.O., Freitag B., von Harrach H.S. Enhanced detection sensitivity with a new windowless XEDS system for AEM based on silicon drift detector technology. Microscopy today 2010, 18(4):14-20.
12. Servanton G., Pantel R., Juhel M., Bertin F. STEM EELS & EDX applications for quantitative arsenic dopant mapping in nanometer scale silicon devices. Proceedings of the 16th Conference Microscopy of Semiconducting Materials, Journal of Physics: Conference Series 2010, 209:p012044.
13. Weyland M., Midgley P.A., Thomas J.M. Electron tomography of nanoparticle catalysts on porous supports: A new technique based on Rutherford scattering. Journal of Physical Chemistry B 2001, Vol.105(No. 33):7882-7886.
14. Yaguchi T., Konno M., Kamino T., Watanabe M. Observation of three-dimensional elemental distributions of a Si device using a 360°-tilt FIB and the cold field-emission STEM system. Ultramicroscopy 2008, 108(12):1603-1615.