Erratum: Improved field-effect transistor performance of a benzotrithiophene polymer through ketal cleavage in the solid state (ACS Applied Materials and Interfaces (2013) 5:5 (1806-1810) DOI: 10.1021/am303138q);Improved field-effect transistor performance of a benzotrithiophene polymer through ketal cleavage in the solid state

ACS Applied Materials and Interfaces

Volumn 5, Issue 5, 2013, Pages 1806-1810

  Nielsen, Christian B ^a   Sohn, Eun Ho ^b   Cho, Dong Jun ^b   Schroeder, Bob C ^a   Smith, Jeremy ^a   Lee, Mongryong ^b   Anthopoulos, Thomas D ^a   Song, Kigook ^b   McCulloch, Iain ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b Kyung Hee University   (South Korea)

Author keywords

benzotrithiophene; conjugated polymers; field effect transistors; hole mobility; thermal cleavage

Indexed keywords

CONJUGATED POLYMERS; HOLE MOBILITY;

BENZOTRITHIOPHENE; CRYSTALLINE THIN FILMS; THERMAL ANNEALING PROCESS; THERMAL CLEAVAGE;

FIELD EFFECT TRANSISTORS;

EID: 84875025370     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am400946r     Document Type: Erratum

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