Hole-transporting transistors and circuits based on the transparent inorganic semiconductor copper(I) thiocyanate (CuSCN) processed from solution at room temperature

Advanced Materials

Volumn 25, Issue 10, 2013, Pages 1504-1509

  Pattanasattayavong, Pichaya ^a   Yaacobi Gross, Nir ^a   Zhao, Kui ^b   Ndjawa, Guy Olivier Ngongang ^b   Li, Jinhua ^c   Yan, Feng ^c   O'Regan, Brian C ^a   Amassian, Aram ^b   Anthopoulos, Thomas D ^a  

^a IMPERIAL COLLEGE LONDON   (United Kingdom)

^b KING ABDULLAH UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Saudi Arabia)

^c HONG KONG POLYTECHNIC UNIVERSITY   (Hong Kong)

Author keywords

copper thiocyanate; solution processing; transparent transistors; wide bandgap p type semiconductors

Indexed keywords

COPPER THIOCYANATES; HOLE TRANSPORTING; INORGANIC SEMICONDUCTORS; LOW-VOLTAGE TRANSISTORS; P TYPE SEMICONDUCTOR; POLYMERIC DIELECTRICS; RELAXOR FERROELECTRIC; SOLUTION-PROCESSING;

COPPER; ENERGY GAP; INORGANIC COMPOUNDS;

TRANSISTORS;

COPPER; CUPROUS THIOCYANATE; THIOCYANIC ACID DERIVATIVE;

ARTICLE; CHEMISTRY; SEMICONDUCTOR; TEMPERATURE;

COPPER; TEMPERATURE; THIOCYANATES; TRANSISTORS, ELECTRONIC;

EID: 84874974765     PISSN: 09359648     EISSN: 15214095     Source Type: Journal    
DOI: 10.1002/adma.201202758     Document Type: Article

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