A technology overview of the powerchip development program

IEEE Transactions on Power Electronics

Volumn 28, Issue 9, 2013, Pages 4182-4201

  Araghchini, Mohammad ^a   Chen, Jun ^b   Doan Nguyen, Vicky ^b   Harburg, Daniel V ^c   Jin, Donghyun ^a   Kim, Jungkwun ^d   Kim, Min Soo ^d   Lim, Seungbum ^a   Lu, Bin ^a   Piedra, Daniel ^a   Qiu, Jizheng ^c   Ranson, John ^e   Sun, Min ^a   Yu, Xuehong ^e   Yun, Hongseok ^b   Allen, Mark G ^e   Alamo, Jesús A ^a   Desgroseilliers, Gary ^a   Herrault, Florian ^e   Lang, Jeffrey H ^a   Levey, Christopher G ^c   Murray, Christopher B ^b   Otten, David ^a   Palacios, Tomás ^a   Perreault, David J ^a   Sullivan, Charles R ^c   more..

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b UNIVERSITY OF PENNSYLVANIA   (United States)

^c DARTMOUTH COLLEGE   (United States)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

^e FINsix Corporation   (United States)

Author keywords

Gallium nitride; high frequency (HF); integrated magnetics; integrated power converter; light emitting diode (LED) driver; PwrSoC

Indexed keywords

HIGH FREQUENCY; INTEGRATED MAGNETICS; INTEGRATED POWER; LIGHT-EMITTING DIODE (LED) DRIVERS; PWRSOC;

GALLIUM NITRIDE; MAGNETIC MATERIALS; MICROPROCESSOR CHIPS; POWER ELECTRONICS;

LIGHT EMITTING DIODES;

EID: 84874592709     PISSN: 08858993     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPEL.2013.2237791     Document Type: Article

References (104)

1. X. Xie, M. Ye, Y. Cai, and J. Wu, "An optocouplerless two-stage high power factor LED driver," in Proc. IEEE Appl. Power Electron. Conf., Mar. 2012, pp. 2078-2083.
2. S. Wang, X. Ruan, K. Yao, S.-C. Tan, Y. Yang, and Z. Ye, "A flickerfree electrolytic capacitor-less ac-dc LED driver," IEEE Trans. Power Electron., vol. 27, no. 11, pp. 4540-4548, Nov. 2012.
3. J. Zhang, H. Zeng, and T. Jiang, "Primary-side control scheme for highpower-factor LED driver with triac dimming capability," IEEE Trans. Power Electron., vol. 27, no. 11, pp. 4619-4629, Nov. 2012.
4. OSTI ID: 953678, "Multi-year program plan FY'09-FY'14: Solid-state lighting research and development," Office Energy Efficiency Renewable Energy U.S. Dept. Energy Navigant Consult. Radcliffe Advis. SSLS., Mar. 2008. http://apps1.eere.energy.gov/buildings/publications/pdfs/ssl/ssl-mypp2009-web. pdf, DOI: 10.2172/953678
5. D. J. Perreault, J. Hu, J. M. Rivas, Y. Han, O. Leitermann, R. C. N. Pilawa-Podgurski, A. Sagneri, and C. R. Sullivan, "Opportunities and challenges in very high frequency power conversion," in Proc. IEEE Appl. Power Electron. Conf. Expo., Feb. 2009, pp. 1-14.
6. R. C. N. Pilawa-Podgurski, A. Sagneri, J. M. Rivas, D. I. Anderson, and D. J. Perreault, "Very-high-frequency resonant boost converters," IEEE Trans. Power Electron., vol. 24, no. 6, pp. 1654-1665, Jun. 2009.
7. T. M. Andersen, S. K. Christensen, A. Knott, andM. A. E. Andersen, "A VHF class E dc-dc converter with self-oscillating gate driver," in Proc. IEEE Appl. Power Electron. Conf., Mar. 2011, pp. 885-891.
8. J. M. Rivas, O. Leitermann, Y. Han, and D. J. Perreault, "A very high frequency dc-dc converter based on a class phi-2 resonant inverter," IEEE Trans. Power Electron., vol. 26, no. 10, pp. 2980-2992, Jun. 2011.
9. OSTI ID: 1046643, Advanced Research Project Agency -Energy (ARPA-E), US Dept. of Energy, "Agile delivery of electrical power technology (ADEPT)," 2010.
10. A. Rand, "Inductor size vs. Q: A dimensional analysis," IEEE Trans. Compon. Parts, vol. 10, no. 1, pp. 31-35, Mar. 1963.
11. W. G. Odendaal and J. A. Ferreira, "Effects of scaling high-frequency transformer parameters," IEEE Trans. Ind. Appl., vol. 35, no. 4, pp. 932-940, Jul. 1999.
12. W.-J. Gu and R. Liu, "A study of volume and weight vs. frequency for high-frequency transformers," in Proc. IEEE Power Electon. Spec. Conf., Jun. 1993, pp. 1123-1129.
13. J. Xiao, A. V. Peterchev, J. Zhang, and S. R. Sanders, "A 4 μA quiescentcurrent dual-mode digitally controlled buck converter IC for cellular phone applications," IEEE J. Solid-State Circuits, vol. 39, no. 12, pp. 2342-2348, Dec. 2004.
14. J. Hu, "Design of low-voltage, high-bandwidth radio-frequency power converters," Ph.D. dissertation, Dept. Electr. Eng. Comput. Sci., Massachusetts Inst. Technol., Cambridge, MA, USA, 2012.
15. R. C. N. Pilawa-Podgurski, D. M. Giuliano, andD. J. Perreault, "Merged two-stage power converter architecture with soft charging switchedcapacitor energy transfer," in Proc. IEEE Power Electron. Spec. Conf., Jun. 2008, pp. 4008-4015.
16. R. C. N. Pilawa-Podgurski and D. J. Perreault, "Merged two-stage power converter with soft charging switched-capacitor stage in 180 nm CMOS," IEEE J. Solid-State Circuits, vol. 47, no. 7, pp. 1-11, Jul. 2012.
17. M. D. Seeman and S. R. Sanders, "Analysis and optimization of switched-capacitor dc-dc converters," IEEE Trans. Power Electron., vol. 23, no. 2, pp. 841-851, Mar. 2008.
18. M. D. Seeman and S. R. Sanders, "Analysis and optimization of switched-capacitor dc-dc converters," in Proc. IEEE Comput. Power Electron. Workshop, Jul. 2006, pp. 216-224.
19. V. Vorperian, "Quasi-square-wave converters: Topologies and analysis," IEEE Trans. Power Electron., vol. 3, no. 2, pp. 183-191, Apr. 1988.
20. S. Lim, "A merged two-stage power conversion architecture with switched capacitor circuit for an LED driver module," S.M. thesis, Dept. Elect. Eng. Comput. Sci., Massachusetts Inst. Technol., MA, USA, May 2012.
21. J. Ranson, "Design of a VHF switched LED driver," M. Eng. Thesis, Dept. Elect. Eng. Comput. Sci., Massachusetts Inst. Technol., MA, USA, Sep. 2012.
22. Y. Fukuda, T. Inoue, T. Mizoguchi, S. Yatabe, and Y. Tachi, "Planar inductor with ferrite layers for dc-dc converter," IEEE Trans. Magn., vol. 39, no. 4, pp. 2057-2061, Jul. 2003.
23. C. R. Sullivan and S. R. Sanders, "Design of microfabricated transformers and inductors for high-frequency power conversion," IEEE Trans. Power Electron., vol. 11, no. 2, pp. 228-238, Mar. 1996.
24. T. O'Donnell, N. Wang, M. Brunet, S. Roy, A. Connell, J. Power, S. C. O'Mathuna, and P. McCloskey, "Thin film micro-transformers for future power conversion," in Proc. IEEE Appl. Power Electron. Conf. Expo., 2004, vol. 2, pp. 939-944.
25. S. Prabhakaran, Y. Sun, P. Dhagat, W. Li, and C. R. Sullivan, "Microfabricated V-groove power inductors for high-current low-voltage fasttransient dc-dc converters," in Proc. IEEE Power Electron. Spec. Conf., Jun. 2005, pp. 1513-1519.
26. N. Wang, T. O'Donnell, S. Roy, P. McCloskey, and S. C. O'Mathuna, "Micro-inductors integrated on silicon for power supply on chip," J. Magn. Magn. Mater., vol. 316, no. 2, pp. e233-e237, 2007.
27. T. O'Donnell, N. Wang, R. Meere, F. Rhen, S. Roy, D. O'Sullivan, and S. C. O'Mathuna, "Microfabricated inductors for 20 MHz dc-dc converters," in Proc. IEEE Appl. Power Electron. Conf. Expo., Feb. 2008, pp. 689-693.
28. J. T. DiBene, P. R. Morrow, C.-M. Park, H. W. Koertzen, P. Zou, F. Thenus, X. Li, S. W. Montgomery, E. Stanford, R. Fite, and P. Fischer, "A 400 amp fully integrated silicon voltage regulator with in-die magnetically coupled embedded inductors," IEEE Appl. Power Electron. Conf. Expo. Spec. Present., Feb. 2010.
29. P. R. Morrow, C.-M. Park, H. W. Koertzen, and J. T. DiBene, "Design and fabrication of on-chip coupled inductors integrated with magnetic material for voltage regulators," IEEE Trans. Magn., vol. 47, no. 6, pp. 1678-1686, Jun. 2011.
30. S. Bae, Y.-K. Hong, J.-J. Lee, J. Jalli, G. S. Abo, A. Lyle, B. C. Choi, and G. W. Donohoe, "High Q Ni-Zn-Cu ferrite inductor for on-chip power module," IEEE Trans. Magn., vol. 45, no. 10, pp. 4773-4776, Oct. 2009.
31. D. Yao, C. G. Levey, and C. R. Sullivan, "Microfabricated V-groove power inductors using multilayer Co-Zr-O thin films for very-highfrequency dc-dc converters," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2011, pp. 1845-1852.
32. M. Wang, J. Li, K. Ngo, and H. Xie, "A novel integrated power inductor in silicon substrate for ultra-compact power supplies," in Proc. IEEE Appl. Power Electron. Conf. Expo., Feb. 2010, pp. 2036-2041.
33. M. Wang, J. Li, K. Ngo, and H. Xie. (2011). Silicon molding techniques for integrated power MEMS inductors. Sens. Actuators A, Phys., [Online]. 166(1), pp. 157-163. Available: http://www.sciencedirect.com/science/article/pii/ S0924424710005108
34. X. Fang, R.Wu, L. Peng, and J. K. O. Sin, "Anewembedded inductor for ZVS dc-dc converter applications," in Proc. Int. Symp. Power Semicond. Dev. ICs, Jun. 2012, pp. 53-56.
35. P. Artillan, M. Brunet, D. Bourrier, J.-P. Laur, N. Mauran, L. Bary, M. Dilhan, B. Estibals, C. Alonso, and J.-L. Sanchez, "Integrated LC filter on silicon for dc-dc converter applications," IEEE Trans. Power Electron., vol. 26, no. 8, pp. 2319-2325, Aug. 2011.
36. H. Jia, J. Lu, X. Wang, K. Padmanabhan, and Z. Shen, "Integration of a monolithic buck converter power IC and bondwire inductors with ferrite epoxy glob cores," IEEE Trans. Power Electron., vol. 26, no. 6, pp. 1627-1630, Jun. 2011.
37. N. Sturcken, R. Davies, C. Cheng, W. E. Bailey, and K. L. Shepard, "Design of coupled power inductors with crossed anisotropy magnetic core for integrated power conversion," in Proc. IEEE Appl. Power Electron. Conf. Expo., Feb. 2012, pp. 417-423.
38. S. Sugahara, K. Yamada, M. Edo, T. Sato, and K. Yamasawa, "90% high efficiency and 100-W/cm3 high power density integrated dc-dc converter for cellular phones," IEEE Trans. Power Electron., vol. 28, no. 4, pp. 1994-2004, Apr. 2013.
39. D. Yao, C. G. Levey, and C. R. Sullivan, "Microfabricated v-groove power inductors using multilayer Co-Zr-O thin films for very-highfrequency dc-dc converters," IEEE Trans. Power Electron., 2013, DOI: 10.1109/TPEL.2012. 2233760.
40. S. C. O'Mathuna, T. O'Donnell, N. Wang, and K. Rinne, "Magnetics on silicon: An enabling technology for power supply on chip," IEEE Trans. Power Electron., vol. 20, no. 3, pp. 585-592, May 2005.
41. S. C. O'Mathuna, N. Wang, S. Kulkarni, and S. Roy, "Review of integrated magnetics for power supply on chip (PwrSoC)," IEEE Trans. Power Electron., vol. 27, no. 11, pp. 4799-4816, Nov. 2012.
42. C. R. Sullivan, D. V. Harburg, J. Qiu, C. G. Levey, and D. Yao, "Integrating magnetics for on-chip power: A perspective," IEEE Trans. Power Electron., 2013, DOI: 10.1109/TPEL.2013.2240465.
43. C. R. Sullivan,W. Li, S. Prabhakaran, and S. Lu, "Design and fabrication of low-loss toroidal air-core inductors," in Proc. IEEE Power Electron. Spec. Conf., Jun. 2007, pp. 1754-1759.
44. A. D. Sagneri, D. I. Anderson, and D. J. Perreault, "Transformer synthesis for VHF converters," in Proc. IEEE Int. Power Electron. Conf., Jun. 2010, pp. 12347-2353.
45. W. Liu, J. Suryanarayanan, J. Nath, S. Mohammadi, L. P. B. Katehi, and M. B. Steer, "Toroidal inductors for radio-frequency integrated circuits," IEEE Trans. Microw. Theor. Tech., vol. 52, no. 2, pp. 646-654, Feb. 2004.
46. L. Vandi, P. Andreani, E. Temporiti, E. Sacchi, I. Bietti, C. Ghezzi, and R. Castello, "Atoroidal inductor integrated in a standardCMOSprocess, " Anal. Integr. Circuits Signal Process., vol. 50, pp. 39-46, 2007.
47. S. Tang, S. Hui, and H. S.-H. Chung, "Coreless planar printed-circuitboard (PCB) transformers: A fundamental concept for signal and energy transfer," IEEE Trans. Power Electron., vol. 15, no. 5, pp. 931-941, Sep. 2000.
48. S. Orlandi, B. Allongue, G. Blanchot, S. Buso, F. Faccio, C. Fuentes, M. Kayal, S. Michelis, and G. Spiazzi, "Optimization of shielded PCB air-core toroids for high efficiency dc-dc converters," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2009, pp. 2073-2080.
49. J. Phinney, J. H. Lang, and D. J. Perreault, "Multi-resonant microfabricated inductors and transformers," in Proc. IEEE Power Electron. Spec. Conf., Jun. 2004, vol. 6, pp. 4527-4536.
50. J. Phinney, "Multi-resonant passive components for power conversion," Ph.D dissertation, Dept. Electr. Eng. Comput. Sci., Massachusetts Inst. Technol., MA, USA, May 2005.
51. M. Wang, I. Batarseh, K. Ngo, and H. Xie, "Design and fabrication of integrated power inductor based on siliconmolding technology," in Proc. IEEE Power Electron. Spec. Conf., Jun. 2007, pp. 1612-1618.
52. T. Pan, A. Baldi, E. Davies-Venn, R. F. Drayton, and B. Ziaie, "Fabrication and modeling of silicon-embedded high Q inductors," in Proc. IEEE Int. Conf. Micro Electr. Mech. Syst., 2004, pp. 809-812.
53. V. Ermolov, T. Lindstrom, H. Nieminen, M. Olsson, M. Read, T. Ryhanen, S. Silanto, and S. Uhrberg, "Microreplicated RF toroidal inductor," IEEE Trans. Microw. Theor. Tech., vol. 52, no. 1, pp. 29-37, Jan. 2004.
54. L. Daniel, C. R. Sullivan, and S. R. Sanders, "Design of microfabricated inductors," IEEE Trans. Power Electron., vol. 14, no. 4, pp. 709-723, Jul. 1999.
55. D. S. Gardner, G. Schrom, F. Paillet, B. Jamieson, T. Karnik, and S. Borkar, "Review of on-chip inductor structures with magnetic films," IEEE Trans. Magn., vol. 45, no. 10, pp. 4760-4766, Oct. 2009.
56. N. Wang, S. Kulkarni, B. Jamieson, J. Rohan, D. Casey, S. Roy, and S. C. O'Mathuna, "High efficiency Si integrated micro-transformers using stacked copper windings for power conversion applications," in Proc. IEEE Appl. Power Electron. Conf., Feb. 2012, pp. 411-416.
57. Y. Sun, C. R. Sullivan, W. Li, D. Kopp, F. Johnson, and S. T. Taylor, "Soft magnetic properties of obliquely deposited Co-Zr-O films," IEEE Trans. Magn., vol. 43, no. 12, pp. 4060-4063, Dec. 2007.
58. D. V. Harburg, X. Yu, F. Herrault, C. G. Levey, M. G. Allen, and C. R. Sullivan, "Micro-fabricated thin-film inductors for on-chip power conversion," in Proc. Int. Conf. Integr. Power Electron. Syst., Mar. 2012, pp. 1-6.
59. J. Qiu and C. R. Sullivan, "Radial-anisotropy nanogranular thin-film magnetic material for toroidal inductors," in Proc. IEEE Appl. Power Electron. Conf. Expo., Feb. 2012, pp. 491-497.
60. R. P. Sylvester and R. L. Ferrari, Finite Elements for Electrical Engineers. Cambridge, U.K.: Cambridge Univ. Press, 1983.
61. M. Tolikas, J. H. Lang, and J. Kirtley, J. L., "Algebraic dual-energy magnetic analysis with application to variable reluctance motor design," IEEE Trans. Energy Convers., vol. 14, no. 3, pp. 270-276, Sep. 1999.
62. M. Araghchini, J. H. Lang, X. Yu, M. S. Kim, F. Herrault, M. G. Allen, J. Qiu, and C. R. Sullivan, "Modeling and measured verification of stored energy and loss in MEMS toroidal inductors," in Proc. IEEE Energy Convers. Conf. Exhibit., Sep. 2012, pp. 3293-3300.
63. D. V. Harburg, J. Qiu, and C. R. Sullivan, "An improved ac lossmodel for the optimization of planar-coil inductors," in Proc. IEEE Contr. Model. Power Electron., Jun. 2012, pp. 1-7.
64. J. H. Spreen, "Electrical terminal representation of conductor loss in transformers," IEEE Trans. Power Electron., vol. 5, no. 4, pp. 424-429, Oct. 1990.
65. J.-P. Vandelac and P. D. Ziogas, "A novel approach for minimizing highfrequency transformer copper losses," IEEE Trans. Power Electron., vol. 3, no. 3, pp. 266-277, Jul. 1988.
66. H. Mukadam, C. R. Sullivan, and S. Prabhakaran, "A high-field highfrequency permeance meter for thin-filmmaterials," in Proc. IEEE Power Electron. Spec. Conf., Jun. 2008, pp. 4044-4050.
67. C. R. Sullivan, D. Yao, G. Gamache, A. Latham, and J. Qiu, "(Invited) Passive component technologies for advanced power conversion enabled by wide-band-gap power devices," ECS Trans., vol. 41, no. 8, pp. 315-330, 2011.
68. C. J. Mehas, K. D. Coonley, and C. R. Sullivan, "Converter and inductor design for fast-response microprocessor power delivery," in Proc. IEEE Power Electron. Spec. Conf., 2000, vol. 3, pp. 1621-1626.
69. J. Qiu and C. R. Sullivan, "Design and fabrication of VHF tapped power inductors using nanogranular magnetic films," IEEE Trans. Power Electron., vol. 27, no. 12, pp. 4965-4975, Dec. 2012.
70. D.Yao and C. R. Sullivan, "Calculation of eddy-current loss in multilayer magnetic films considering displacement current," J. Appl. Phys., vol. 105, no. 7, pp. 07A335-1-07A335-3, Apr. 2009.
71. D. Yao and C. R. Sullivan, "Effect of capacitance on eddy-current loss in multi-layer magnetic films for MHz magnetic components," in Proc. IEEE Energy Convers. Congr. Expo., Sep. 2009, pp. 1025-1031.
72. C. R. Sullivan and S. R. Sanders, "Measured performance of a highpower-density microfabricated transformer in a dc-dc converter," in Proc. IEEE Power Electron. Spec. Conf., Jun. 1996, pp. 287-294.
73. F. Y. Cheng and D. Li, "Multiobjective optimization design with Pareto genetic algorithm," J. Struct. Eng., vol. 123, no. 9, pp. 1252-1261, 1997.
74. X. Yu, M. Kim, F. Herrault, C.-H. Ji, J. Kim, and M. G. Allen, "Siliconembedded 3D toroidal air-core inductor with through-wafer interconnect for on-chip integration," in Proc. IEEE Int. Conf. Micro Elect. Mech. Syst., Feb. 2012, pp. 325-328.
75. J. Kim, F. Herrault, X. Yu, M. Kim, and M. G. Allen, " Microfabrication of air core power inductors with metal-encapsulated polymer vias," J. Micromech. Microeng., vol. 23 no. 3, pp. 1-7, 2013, doi: 10.1088/0960-1317/23/3/035006.
76. C.-H. Ji, F. Herrault, P. Hopper, P. Smeys, P. Johnson, and M. G. Allen, "Electroplated metal buried interconnect and through-wafer metal-filled via technology for high-power integrated electronics," IEEE Trans. Adv. Packag., vol. 32, no. 3, pp. 695-702, Aug. 2009.
77. J.-W. Park and M. G. Allen, "Polymer-core conductor approaches for RF MEMS," J. Microelectromech. Syst., vol. 14, no. 5, pp. 886-894, Oct. 2005.
78. H. Seidel, "Anisotropic etching of crystalline silicon in alkaline solutions," J. Electrochem. Soc., vol. 137, no. 11, pp. 3612-3626, 1990.
79. J. Qiu and C. R. Sullivan, "Radial-anisotropy thin-film magnetic material for high-power-density toroidal inductors," in Proc. Int. Conf. Integr. Power Electron. Syst., Mar. 2012, pp. 1-6.
80. Y. Sun, W. Li, P. Dhagat, and C. R. Sullivan, "Perpendicular anisotropy in granular Co-Zr-O films," J. Appl. Phys., vol. 97, no. 10, 2005.
81. R. B. Goldfarb and H. E. Bussey, "Method for measuring complex permeability at radio frequencies," Rev. Sci. Instrum., vol. 58, no. 4, pp. 624-627, Apr. 1987.
82. D. Venturin, C. Desvaux, P. Renaud, B. Chaudret, and T. Parra, "A nanoparticle-based ferromagnetic dielectric Fe/Co composite for RF integrated inductors," Eur. Microw. Conf., pp. 5-8, 2007.
83. H. Dong, A. Meininger, H. Jiang, K. Moon, and C. P. Wong, "Magnetic nanocomposite for potential ultrahigh frequency microelectronic applications," J. Electron. Mater., pp. 593-597, 2007.
84. M. I. Bodnarchuk, M. V. Kovalenko, S. Pichler, G. Fritz-Popovski, G. Hesser, andW.Heiss, "Large-area ordered superlattices frommagnetic wustite/cobalt ferrite core/shell nanocrystals by doctor blade casting," ACS Nano, pp. 423-431, 2010.
85. S. Dasgupta, Nidhi, D. F. Brown, F. Wu, S. Keller, J. S. Speck, and U. K. Mishra, "Ultralow nonalloyed ohmic contact resistance to self aligned N-polar GaN high electron mobility transistors by In(Ga)N regrowth," Appl. Phys. Lett., vol. 96, no. 14, p. 143504, Apr. 2010.
86. D. S. Lee, J. W. Chung, H.Wang, X. Gao, S. Guo, P. Fay, and T. Palacios, "245 GHz InAlN/GaN HEMTs with oxygen plasma treatment," IEEE Electron. Device Lett., vol. 32, no. 6, pp. 755-757, Jun. 2011.
87. T. Palacios, C.-S. Suh, A. Chakraborty, S. Keller, S. P. DenBaars, and U. K. Mishra, "High-performance e-mode AlGaN/GaN HEMTs," IEEE Electron. Device Lett., vol. 27, no. 6, pp. 428-430, Jun. 2006.
88. Y. Cai, Y. Zhou, K. J. Chen, and K. M. Lau, "High-performance enhancement-mode AlGaN/GaN HEMTs using fluoride-based plasma treatment," IEEE Electron Device Lett., vol. 26, no. 7, pp. 435-437, Jul. 2005.
89. L. Shen, T. Palacios, C. Poblenz, A. Corrion, A. Chakraborty, N. Fichtenbaum, S. keller, S. P. Denbaars, J. S. Speck, and U. K. Mishra, "Unpassivated high power deeply recessed GaN HEMTs with fluorineplasma surface treatment," IEEE Electron Device Lett., vol. 27, no. 4, pp. 214-216, Apr. 2006.
90. B. Lu, O. I. Saadat, E. L. Piner, and T. Palacios, "Enhancement-mode AlGaN/GaN HEMTs with high linearity fabricated by hydrogen plasma treatment," in Proc. 68th Dev. Res. Conf., College Park, PA, USA, Jun 2009, pp. 59-60.
91. T. Mizutani, M. Ito, S. Kishimoto, and F. Nakamura, "AlGaN/GaN HEMTs with thin InGaN cap layer for normally off operation," IEEE Electron Device Lett., vol. 28, no. 7, pp. 549-551, Jul. 2007.
92. B. Lu, O. I. Saadat, and T. Palacios, "High-performance integrated dualgate AlGaN/GaN enhancement-mode transistor," IEEE Electron. Device Lett., vol. 31, no. 9, pp. 990-992, Sep. 2010.
93. B. Lu, E. Matioli, and T. Palacios, "Tri-gate normally-off GaN power MISFET," IEEE Electron. Device Lett., vol. 33, no. 3, pp. 360-362, Mar. 2012.
94. M. A. Briere, "GaN on Si based power devices: An opportunity to significantly impact global energy consumption," in Proc. 25th Compound Semicond. Manufact. Technol., Portland, OR, USA, May 2010, p. 221.
95. J. Wuerfl, E. Bahat-Treidel, F. Brunner, E. Cho, O. Hilt, P. Ivo, A. Knauer, P. Kurpas, R. Lossy,M. Schulz, S. Singwald,M.Weyers, and R. Zhytnytska, "Reliability issues of GaN based high voltage power devices," Microelectron. Rel., vol. 51, no. 9-11, pp. 1710-1716, Sep. 2011.
96. J. Joh and J. A. del Alamo, "Mechanisms for electrical degradation of GaN high-electron mobility transistors," in Proc. 2006 Int. Electron. Dev. Meeting, San Francisco, CA, USA, Dec 2006, pp. 415-418.
97. J. Joh and J. A. del Alamo, "Critical voltage for electrical degradation of GaN high electron mobility transistors," IEEE Electron. Dev. Lett., vol. 29, no. 4, pp. 287-289, Apr. 2008.
98. J. A. del Alamo and J. Joh, "GaN HEMT reliability," Microelectron. Rel., vol. 49, no. 9-11, pp. 1200-1206, Sep. 2009.
99. M. Meneghini, A. Stocco, R. Silvestri, N. Ronchi, G. Meneghesso, and E. Zanoni, "Impact of hot electrons on the reliability of AlGaN/GaN high electron mobility transistors," in Proc. Int. Rel. Phys. Symp., Portland, OR, USA, Apr. 2012, pp. 2C2.1-2C2.5.
100. W. Saito, T. Nitta, Y. Kakiuchi, Y. Saito, K. Tsuda, I. Omura, and M. Yamaguchi, "Suppression of dynamic on-resistance increase and gate charge measurements in high-voltageGaN-HEMTs with optimized fieldplate structure," IEEE Trans. Electron Devices, vol. 54, no. 8, pp. 1825-1830, Aug. 2007.
101. D. Jin and J. A. del Alamo, "Mechanisms responsible for dynamic onresistance in GaN high-voltage HEMTs," in Proc. IEEE 24th Int. Symp. Power Semicond. Dev. ICs, Brugge, Belgium, Jun 2012, pp. 333-336.
102. D. Jin and J. A. del Alamo "Impact of high-power stress on dynamic onresistance of high-voltage GaN HEMTs," in Proc. 2012 Rel. Compound Semicond. Symp., Boston, MA, USA, Apr. 2012.
103. S. Demirtas, J. Joh, and J. A. del Alamo, "High voltage degradation of GaN high electron mobility transistors on silicon substrate," Microelectron. Rel., vol. 50, no. 6, pp. 758-762, Jun. 2010.
104. T. Imada, K. Motoyoshi, M. Kanamura, and T. Kikkawa, "Reliability analysis of enhancement-mode GaNMIS-HEMT with gate-recess structure for power supplies," in Proc. IEEE Int. Integr. Rel. Workshop, S. Lake Tahoe, CA, USA, Oct. 2011, pp. 38-41.