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Physical Review B - Condensed Matter and Materials Physics

Volumn 87, Issue 7, 2013, Pages

Spin diffusion in fullerene-based devices: Morphology effect

(5) Nguyen, Tho D a Wang, Fujian a Li, Xiao Guang b Ehrenfreund, Eitan a,c Vardeny, Z Valy a

a UNIVERSITY OF UTAH (United States)

b UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA (China)

c TECHNION ISRAEL INSTITUTE OF TECHNOLOGY (Israel)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84874509214 PISSN: 10980121 EISSN: 1550235X Source Type: Journal
DOI: 10.1103/PhysRevB.87.075205 Document Type: Article

Times cited : (63)

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