High power, high efficiency E-band GaN amplifier MMICs

2012 IEEE International Conference on Wireless Information Technology and Systems, ICWITS 2012

Volumn , Issue , 2012, Pages

  Brown, Andrew ^a   Brown, Ken ^a   Chen, James ^a   Gritters, Darin ^a   Hwang, K C ^a   Ko, Elbert ^a   Kolias, Nick ^a   O'Connor, Shane ^a   Sotelo, Mike ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

GALLIUM NITRIDE; MONOLITHIC MICROWAVE INTEGRATED CIRCUITS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM COMPOUNDS; WIDE BAND GAP SEMICONDUCTORS;

E-BANDS; HIGH POWER; HIGH POWER-HIGH FREQUENCY; HIGHER EFFICIENCY; OUTPUT POWER; PERFORMANCE; POWER AMPLIFIER DESIGNS; SEMICONDUCTOR PROCESS;

III-V SEMICONDUCTORS;

EID: 84874254677     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICWITS.2012.6417777     Document Type: Conference Paper

References (4)

1. G74-PA preliminary datasheet for 68-80 GHz GaN MMIC, HRL Laboratories.
2. G84-PA preliminary datasheet for 79-85 GHz GaN MMIC, HRL Laboratories.
3. Y. Nakasha, et. Al. "E-Band 85-mW Oscillator and 1.3-W Amplifier IC's using 0.12-mm GaN HEMTs for Millimeter-wave Transceivers," IEEE CSIC Symp. Dig., October 2010.
4. Allocations and Service Rules for the 71-76 GHz, 81-86 GHz, and 92-95 GHz Bands, Federal Communications Commission, FCC 05-45, Washington DC.