1 MHz resonant DC/DC-converter using 600 V gallium nitride (GaN) power transistors

Materials Science Forum

Volumn 740-742, Issue , 2013, Pages 1123-1127

  Wienhausen, Arne Hendrik ^a   Kranzer, Dirk ^a  

^a FRAUNHOFER INSTITUTE FOR SOLAR ENERGY SYSTEMS ISE   (Germany)

Author keywords

Gallium nitride gate injection transistor; LLC; MHz switching frequency; Resonant DC DC converter

Indexed keywords

GALLIUM NITRIDE; III-V SEMICONDUCTORS; NITRIDES; SILICON CARBIDE;

GALLIUM NITRIDES (GAN); GATE INJECTION TRANSISTORS; HIGH-EFFICIENCY; LLC CONVERTER; ON-STATE RESISTANCE; PRODUCTION COST; RESONANT DC/DC- CONVERTER; SWITCHING ENERGY;

POWER TRANSISTORS;

EID: 84874093463     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/MSF.740-742.1123     Document Type: Conference Paper

References (4)

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