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Applied Physics Express

Volumn 6, Issue 2, 2013, Pages

A comparative computational study of structures, diffusion, and dopant interactions between li and na insertion into Si

(3) Malyi, Oleksandr I a Tan, Teck L b Manzhos, Sergei a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF HIGH PERFORMANCE COMPUTING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE/DISCHARGE; COMPUTATIONAL STUDIES; DIFFUSION RATE; INTERSTITIAL DEFECTS; ION CONCENTRATIONS; MIGRATION BARRIERS; SI MATRIX; TETRAGONAL SITES;

SILICON; SODIUM;

LITHIUM;

EID: 84873949801 PISSN: 18820778 EISSN: 18820786 Source Type: Journal
DOI: 10.7567/APEX.6.027301 Document Type: Article

Times cited : (81)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.