Effect of Cu/In ratio on properties of CuInSe2 thin films prepared by selenization of Cu-In layers

Crystal Research and Technology

Volumn 48, Issue 2, 2013, Pages 94-99

  Shi, Jen Bin ^a   Chen, Yu Cheng ^a   Wu, Po Feng ^a   Yang, Shui Yuang ^a   Kang, Tsung Kuei ^a   Yang, Ping Chang ^a   Lin, Cheng Li ^a   Young, San Lin ^b   Kao, Ming Cheng ^b  

^a FENG CHIA UNIVERSITY   (Taiwan)

^b HSIUPING INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

band gap; Cu In layers; CuInSe2 thin film; electrodeposition; selenization

Indexed keywords

CU LAYERS; CU-IN LAYERS; CUINSE2; DENSE SURFACE; SEALED GLASS; SELENIZATION;

AGGLOMERATION; COPPER; COPPER COMPOUNDS; DIFFRACTION PATTERNS; ELECTRODEPOSITION; ENERGY GAP; GLASS; INDIUM; INTERFEROMETRY; OCEAN HABITATS; THIN FILMS; TUBES (COMPONENTS); UNSATURATED COMPOUNDS; X RAY DIFFRACTION;

SEMICONDUCTING SELENIUM COMPOUNDS;

EID: 84873903583     PISSN: 02321300     EISSN: 15214079     Source Type: Journal    
DOI: 10.1002/crat.201200269     Document Type: Article

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