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Volumn 46, Issue 6, 2013, Pages

Graphene terahertz uncooled bolometers

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; DEVICE MODELS; EFFECTIVE TEMPERATURE; ELECTRONS AND HOLES; GRAPHENE LAYERS; GRAPHENE NANORIBBONS; HOT ELECTRON BOLOMETER; P-TYPE; RESPONSIVITY; SEMICONDUCTOR HETEROSTRUCTURES; TERAHERTZ; THZ FREQUENCIES; THZ RADIATION; UNCOOLED;

EID: 84873833083     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/6/065102     Document Type: Article
Times cited : (60)

References (43)
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    • Vasko F T and Ryzhii V 2008 Phys. Rev. B 77 195433
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    • Vasko, F.T.1    Ryzhii, V.2
  • 9
    • 67650142125 scopus 로고    scopus 로고
    • 10.1103/PhysRevB.79.245311 1098-0121 B 245311
    • Ryzhii V and Ryzhii M 2009 Phys. Rev. B 79 245311
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  • 28
    • 44149119344 scopus 로고    scopus 로고
    • Room-temperature all-semiconducting sub-10-nm graphene nanoribbon field-effect transistors
    • DOI 10.1103/PhysRevLett.100.206803
    • Wang X, Ouyang Y, Li X, Wang H, Guo J and Dai H 2008 Phys. Rev. Lett. 100 206803 (Pubitemid 351718006)
    • (2008) Physical Review Letters , vol.100 , Issue.20 , pp. 206803
    • Wang, X.1    Ouyang, Y.2    Li, X.3    Wang, H.4    Guo, J.5    Dai, H.6
  • 38
    • 77749251978 scopus 로고    scopus 로고
    • 10.1063/1.3291615 0003-6951 081917
    • Wang H et al 2010 Appl. Phys. Lett. 96 081917
    • (2010) Appl. Phys. Lett. , vol.96 , Issue.8
    • Wang, H.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.