Investigation of gate voltage oscillations in an IGBT module after partial bond wires lift-off

Microelectronics Reliability

Volumn 53, Issue 2, 2013, Pages 282-287

  Zhou, Luowei ^a   Zhou, Shengqi ^a   Xu, Mingwei ^a  

^a CHONGQING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BOND WIRE; CHIP-LEVEL; GATE CIRCUIT; GATE VOLTAGES; IGBT-MODULES; IN-FIELD; INSULATED GATE BIPOLAR TRANSISTOR MODULES; LIFT OFFS; PARASITIC PARAMETER; PARTIAL BONDS; POWER CIRCUIT; PROGNOSTIC APPROACH;

ELECTRIC NETWORK ANALYSIS; EXPERIMENTS; INSULATED GATE BIPOLAR TRANSISTORS (IGBT); WIRE;

CIRCUIT OSCILLATIONS;

EID: 84873718646     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2012.08.024     Document Type: Article

References (26)

1. S. Bernet Recent developments of high power converters for industry and traction applications IEEE Trans Power Electron 15 2000 1102 1117
2. J. Arai, K. Iba, T. Funabashi, Y. Nakanishi, K. Koyanagi, and R. Yokoyama Power electronics and its applications to renewable energy in Japan IEEE Circ Syst Mag 8 2008 52 66
3. Z. Chen, J.M. Guerrero, and F. Blaabjerg A review of the state of the art of power electronics for wind turbines IEEE Trans Power Electron 24 2009 1859 1875
4. Y.L. Xiong, X. Cheng, Z.J. Shen, C.T. Mi, H.J. Wu, and V.K. Garg Prognostic and warning system for power-electronic modules in electric, hybrid electric, and fuel-cell vehicles IEEE Trans Ind Electron 55 2008 2268 2276
5. S. Yang, A. Bryant, P. Mawby, D. Xiang, L. Ran, and P. Tavner An industry-based survey of reliability in power electronic converters IEEE Trans Ind Appl 47 2011 1441 1451
6. S. Yang, D. Xiang, A. Bryant, P. Mawby, L. Ran, and P. Tavner Condition monitoring for device reliability in power electronic converters: a review IEEE Trans Power Electron 25 2011 2734 2752
7. G. Lefranc, T. Licht, H.J. Schultz, R. Beinert, and G. Mitic Reliability testing of high-power multi-chip IGBT modules Microelectron Reliab 40 2000 1659 1663
8. M. Ciappa Selected failure mechanisms of modern power modules Microelectron Reliab 42 2002 653 667
9. A.T. Bryant, P.A. Mawby, P.R. Palmer, E. Santi, and J.L. Hudgins Exploration of power device reliability using compact device models and fast electrothermal simulation IEEE Trans Ind Appl 44 2008 894 903
10. D. Xiang, L. Ran, P. Tavner, A. Bryant, S. Yang, and P. Mawby Monitoring solder fatigue in a power module using case-above-ambient temperature rise IEEE Trans Ind Appl 47 2011 2578 2591
11. D.W. Xiang, L. Ran, P. Tavner, S.Y. Yang, A. Bryant, and P. Mawby Condition monitoring power module solder fatigue using inverter harmonic identification IEEE Trans Power Electron 27 2012 235 247
12. M. Musallam, and C.M. Johnson Real-Time compact thermal models for health management of power electronics IEEE Trans Power Electron 25 2010 1416 1425
13. M.H. Rashid Power electronics: circuits, devices, and applications 3rd ed. 2004 Pearson/Prentice Hall NJ
14. N.M. Vichare, and M.G. Pecht Prognostics and health management of electronics IEEE Trans Compon Packag Technol 29 2006 222 229
15. N. Patil, J. Celaya, D. Das, K. Goebel, and M. Pecht Precursor parameter identification for insulated gate bipolar transistor (IGBT) prognostics IEEE Trans Reliab 58 2009 271 276
16. V. Smet, F. Forest, J. Huselstein, F. Richardeau, Z. Khatir, and S. Lefebvre Ageing and failure modes of IGBT modules in high-temperature power cycling IEEE Trans Ind Electron 58 2011 4931 4941
17. N. Patil, D. Das, and M. Pecht A prognostic approach for non-punch through and field stop IGBTs Microelectron Reliab 52 2011 482 488
18. A. Bryant, S.Y. Yang, P. Mawby, D.W. Xiang, L. Ran, and P. Tavner Investigation into IGBT dV/dt during Turn-Off and its temperature dependence IEEE Trans Power Electron 26 2011 3019 3031
19. A.R. Hefner, and D.M. Diebolt An experimentally verified IGBT model implemented in saber circuit simulator IEEE Trans Power Electron 9 1994 532 542
20. N. Mohan, T.M. Undeland, and W.P. Robbins Power electronics: converters, applications, and design 3rd ed. 2003 Wiley New York
21. C. Martin, J.L. Schanen, J.M. Guichon, and R. Pasterczyk Analysis of electromagnetic coupling and current distribution inside a power module IEEE Trans Ind Appl 43 2007 893 901
22. J.T. Katsikadelis Boundary elements theory and applications 2002 Elsevier Oxford
23. Yong Tang, An Hu, and Ming Chen IGBT gate characteristics and parameter extraction methods Trans China Electrotech Soc 2009 76 80
24. A.T. Bryant, K. Xiaosong, E. Santi, P.R. Palmer, and J.L. Hudgins Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models IEEE Trans Power Electron 21 2006 295 309
25. K. Wanying, A. Hyungkeun, and M.A.E. Nokali A parameter extraction algorithm for an IGBT behavioral model IEEE Trans Power Electron 19 2004 1365 1371
26. M. Trivedi, and K. Shenai Parasitic extraction methodology for insulated gate bipolar transistors IEEE Trans Power Electron 15 2000 799 804