Influence of Annealing on Physical Properties of CdO Thin Films Prepared by SILAR Method

Journal of Materials Science and Technology

Volumn 29, Issue 1, 2013, Pages 17-21

  Gokul, B ^a   Matheswaran, P ^a   Sathyamoorthy, R ^a  

^a KONGUNADU ARTS AND SCIENCE COLLEGE   (India)

Author keywords

Annealing; Electrical resistivity; Hall effect; Porous structure

Indexed keywords

ANNEALING TEMPERATURES; BAND GAP ENERGY; CADMIUM OXIDE; CDO THIN FILMS; CRYSTALLINITIES; CUBIC STRUCTURE; ELECTRICAL RESISTIVITY; ENERGY DISPERSIVE; GRAIN SIZE; HALL EFFECT MEASUREMENT; OPTICAL SPECTROSCOPY; POLYCRYSTALLINE; POROUS NATURE; POROUS STRUCTURES; SEM ANALYSIS; SILAR METHOD; SUCCESSIVE IONIC LAYER ADSORPTION AND REACTIONS; XRD ANALYSIS;

ADSORPTION; ANNEALING; CADMIUM; CADMIUM COMPOUNDS; CARRIER CONCENTRATION; ELECTRIC CONDUCTIVITY; HALL EFFECT; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SPECTROSCOPIC ANALYSIS; THIN FILMS; X RAY DIFFRACTION;

FILM PREPARATION;

EID: 84873058722     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jmst.2012.11.015     Document Type: Article

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