Temperature dependence of annealed and nonannealed HEMT ohmic contacts between 5 and 350 K

IEEE Transactions on Electron Devices

Volumn 60, Issue 2, 2013, Pages 787-792

  Alt, Andreas R ^a   Bolognesi, C R ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Annealed; contact; cryogenic; gate; InP HEMT; nonannealed; process metals; Rc; Rg; resistance; temperature dependence

Indexed keywords

ANNEALED; GATE; INP HEMT; NONANNEALED; RC; RG; TEMPERATURE DEPENDENCE;

ANNEALING; CONTACT RESISTANCE; CONTACTS (FLUID MECHANICS); CRYOGENICS; ELECTRIC CONTACTORS; ELECTRIC RESISTANCE; HETEROJUNCTION BIPOLAR TRANSISTORS; OHMIC CONTACTS; SHEET RESISTANCE; TEMPERATURE DISTRIBUTION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 84872871477     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2234751     Document Type: Article

References (25)

1. K. J. Chen, T. Enoki, K. Maezawa, K. Arai, and M. Yamamoto, "Highperformance InP-based enhancement-mode HEMTs using non-alloyed ohmic contacts and Pt-based buried-gate technologies," IEEE Trans. Electron Devices, vol. 43, no. 2, pp. 252-257, Feb. 1996. (Pubitemid 126768114)
2. R. Stall, C. E. C. Wood, K. Board, and L. F. Eastman, "Ultra low resistance ohmic contacts to n-GaAs," Electron. Lett., vol. 15, no. 24, pp. 800-801, Nov. 1979. (Pubitemid 10450227)
3. J. M. Woodall, J. L. Freeouf, G. D. Pettit, T. Jackson, and P. Kirchner, "Ohmic contacts to n-GaAs using graded band gap layers of Ga1?xInxAs grown by molecular beam epitaxy," J. Vac. Sci. Technol., vol. 19, no. 3, pp. 626-627, Sep. 1981. (Pubitemid 12472864)
4. S. J. Lee and C. R. Crowell, "Parasitic source and drain resistance in high-electron-mobility transistors," Solid State Electron., vol. 28, no. 7, pp. 659-668, Jul. 1985. (Pubitemid 15585950)
5. S. Kuroda, N. Harada, T. Katakami, and T. Mimura, "HEMT with nonalloyed ohmic contacts using n+-InGaAs cap layer," IEEE Electron Device Lett., vol. 8, no. 9, pp. 389-391, Sep. 1987. (Pubitemid 17650862)
6. K. Dae-Hyun, B. Brar, and J. A. del Alamo," fT = 688 GHz and fmax = 800 GHz in Lg = 40 nm In0. 7Ga0. 3As MHEMTs with gm-max > 2. 7 mS/μm," in Proc. IEEE IEDM, 2011, pp. 13. 6. 1-13. 6. 4.
7. K. Higuchi, M. Mori, M. Kudo, and T. Mishima, "New low contact resistance triple capping layer enabling very high Gm InAIAs/lnGaAs HEMTs," J. Electron. Mater., vol. 25, no. 5, pp. 643-647, May 1996. (Pubitemid 126579231)
8. H. Li, Z. Feng, C. W. Tang, and K. M. Lau, "Fabrication of 150-nm T-gate metamorphic AlInAs/GaInAs HEMTs on GaAs substrates by MOCVD," IEEE Electron Device Lett., vol. 32, no. 9, pp. 1224-1226, Sep. 2011.
9. A. J. M. David, M. Helen, E. Khaled, W. Griogair, R. S. Colin, and T. Iain, "50-nm self-aligned and "Standard" T-gate InP pHEMT comparison: The influence of parasitics on performance at the 50-nm node," IEEE Trans. Electron Devices, vol. 53, no. 12, pp. 2920-2925, Dec. 2006.
10. I. Watanabe, K. Shinohara, T. Kitada, S. Shimomura, A. Endoh, Y. Yamashita, T. Mimura, S. Hiyamizu, and T. Matsui, "Thermal stability of Ti/Pt/Au ohmic contacts for cryogenically cooled InP-based HEMTs on (411) A-oriented substrates by MBE," J. Cryst. Growth, vol. 301/302, pp. 1025-1029, Apr. 2007. (Pubitemid 46441034)
11. P. Lamarre, R. McTaggart, M. Pulley, J. Huang, and G. Jackson, "Ohmic contacts with different metal structures for lattice matched InP based heterostructures," in Proc. 5th Int. Conf. Indium Phosphide Relat. Mater., 1993, pp. 333-336. (Pubitemid 23691688)
12. G. Stareev, A. Umbach, F. Fidorra, and H. Roehle, "A reliable fabrication technique for very low resistance ohmic contacts to p-InGaAs using low energy Ar+ ion beam sputtering," in Proc. 3rd Int. Conf. Indium Phosphide Relat. Mater., 1991, pp. 264-267.
13. L. Liang, A. R. Alt, H. Benedickter, and C. R. Bolognesi, "InP-HEMT X-band low-noise amplifier with ultralow 0. 6-mW power consumption," IEEE Electron Device Lett., vol. 33, no. 2, pp. 209-211, Feb. 2012.
14. A. R. Alt, C. R. Bolognesi, J. D. Gallego, C. Diez, I. Lopez-Fernandez, and A. Barcia, "Ultra-low noise InP pHEMTs for cryogenic deep-space and radio-astronomy applications," in Proc. 23rd Int. Conf. CSW/IPRM, 2011, pp. 1-4.
15. W. Shockley, Rep. No. A1-TOR-64-207, Air Force Atomic Lab., Wright-Patterson Air Force Base, OH, USA, Sep. 1964.
16. S. S. Cohen, "Contact resistance and methods for its determination," Thin Solid Films, vol. 104, no. 3/4, pp. 361-379, Jun. 1983.
17. G. S. Marlow and M. B. Das, "The effects of contact size and non-zero metal resistance on the determination of specific contact resistance," Solid State Electron., vol. 25, no. 2, pp. 91-94, Feb. 1982.
18. P. J. Simmonds, H. E. Beere, D. A. Ritchie, and S. N. Holmes, "Growthtemperature optimization for low-carrier-density In0. 75Ga0. 25As-based high electron mobility transistors on InP," J. Appl. Phys., vol. 102, no. 8, pp. 083518-1-083518-4, Oct. 2007.
19. F. A. Padovani and R. Stratton, "Field and thermionic-field emission in Schottky barriers," Solid State Electron., vol. 9, no. 7, pp. 695-707, Jul. 1966.
20. K. A. Jones, E. H. Linfield, and J. E. F. Frost, "Contact resistances of NiGeAu, PdGeTiPt, and TiPd ohmic contacts to GaAs and their temperature dependence from 4. 2 to 350 K," Appl. Phys. Lett., vol. 69, no. 27, pp. 4197-4199, Dec. 1996. (Pubitemid 126619297)
21. A. Iliadis and K. E. Singer, "Metallurgical behaviour of Ni/Au-Ge ohmic contacts to GaAs," Solid State Commun., vol. 49, no. 1, pp. 99-101, Jan. 1984. (Pubitemid 14569432)
22. T. Arai, K. Sawada, and N. Hara, "NiAuGeAu ohmic contacts for a planar InP-based high electron mobility transistor structure with suppressed drain conductance frequency dispersion," J. Vac. Sci. Technol. B, Microelectron. Nanometer Struct., vol. 21, no. 2, pp. 795-799, Mar. 2003. (Pubitemid 36516619)
23. P. P. Debye and E. M. Conwell, "Electrical properties of N-type germanium," Phys. Rev., vol. 93, no. 4, pp. 693-706, Feb. 1954.
24. J. R. Sambles, K. C. Elsom, and D. J. Jarvis, "The electrical resistivity of gold films," Philos. Trans. Roy. Soc. London A, Math. Phys. Sci., vol. 304, no. 1486, pp. 365-396, Mar. 1982.
25. R. A. Pucel, D. J. Masse, and C. F. Krumm, "Noise performance of gallium arsenide field-effect transistors," IEEE J. Solid-State Circuits, vol. 11, no. SSC-2, pp. 243-255, Apr. 1976.