Experimental detection and numerical validation of different failure mechanisms in IGBTs during unclamped inductive switching

IEEE Transactions on Electron Devices

Volumn 60, Issue 2, 2013, Pages 563-570

  Breglio, Giovanni ^a   Irace, Andrea ^a   Napoli, Ettore ^a   Riccio, Michele ^a   Spirito, Paolo ^a  

^a UNIVERSITY OF NAPLES FEDERICO II   (Italy)

Author keywords

Insulated gate bipolar transistors (IGBTs); power semiconductor switches; semiconductor device reliability; semiconductor device testing

Indexed keywords

CURRENT CONDUCTION; CURRENT LIMITATION; CURRENT LIMITS; DEVICE FAILURES; ENERGY LIMITATIONS; EXPERIMENTAL EVALUATION; FAILURE CURRENTS; FAILURE MECHANISM; INDUCTANCE VALUES; LATCH-UPS; LOCAL LIFETIME CONTROL; NEGATIVE DIFFERENTIAL RESISTANCES; NUMERICAL VALIDATIONS; PHYSICAL PARAMETERS; POWER SEMICONDUCTOR SWITCHES; PUNCH-THROUGH; SEMICONDUCTOR DEVICE RELIABILITY; TIME DURATION; TRENCH IGBT; UNCLAMPED INDUCTIVE SWITCHING;

POWER ELECTRONICS; SEMICONDUCTOR DEVICE TESTING;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

EID: 84872836275     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2226177     Document Type: Article

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