Optical, scintillation properties and defect study of Gd2Si 2O7:Ce single crystal grown by floating zone method

Physica B: Condensed Matter

Volumn 411, Issue , 2013, Pages 114-117

  Feng, He ^a   Xu, Wusheng ^b   Ren, Guohao ^c   Yang, Qiuhong ^a   Xie, Jianjun ^a   Xu, Jun ^c   Xu, Jiayue ^d  

^a SHANGHAI UNIVERSITY   (China)

^b GE GLOBAL RESEARCH   (China)

^c SHANGHAI INSTITUTE OF CERAMICS   (China)

^d SHANGHAI INSTITUTE OF TECHNOLOGY   (China)

Author keywords

Defects; Gd2Si2O7:Ce; Optical properties; Single crystal; Thermally stimulated luminescence

Indexed keywords

DEFECT STUDY; ENERGY DEPTH; EXCITATION AND EMISSION SPECTRA; FLOATING ZONE METHOD; FLUORESCENT DECAY; RELATIVE ENERGIES; SCINTILLATION PERFORMANCE; SCINTILLATION PROPERTIES; TEMPERATURE INCREASE; THERMALLY STIMULATED LUMINESCENCE; ULTRA-VIOLET; UV EMISSIONS; VACUUM ULTRAVIOLETS; VUV EXCITATION;

CRYSTAL GROWTH FROM MELT; DEFECTS; EMISSION SPECTROSCOPY; GADOLINIUM; OPTICAL PROPERTIES; SILICON; SILICON WAFERS; THERMOLUMINESCENCE;

SINGLE CRYSTALS;

EID: 84872775443     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2012.11.042     Document Type: Article

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