Dependencies of donor-acceptor memory on molecular levels

Journal of Physical Chemistry C

Volumn 117, Issue 1, 2013, Pages 677-682

  Sim, Raymond ^a,b   Ming, Wang ^a   Setiawan, Yudi ^b   Lee, Pooi See ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b GLOBALFOUNDRIES SINGAPORE PTE LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE-INJECTION MECHANISMS; CONDUCTIVITY MODULATION; DATA LOSS; DONOR AND ACCEPTOR; DONOR-ACCEPTORS; ELECTRICAL BISTABILITY; ELECTRON-DONATING; FLUORESCENCE EMISSION; MOLECULAR LEVELS; POLY (3-HEXYLTHIOPHENE); POOLE-FRENKEL; RAMAN SPECTROSCOPIC; RESISTIVE SWITCHING; STRESS TEST; SWITCH-ON VOLTAGE; UV-VIS ABSORPTIONS;

CHARGE TRANSFER; RAMAN SPECTROSCOPY; SWITCHING SYSTEMS; THERMIONIC EMISSION;

ELECTRONIC EQUIPMENT TESTING;

EID: 84872411071     PISSN: 19327447     EISSN: 19327455     Source Type: Journal    
DOI: 10.1021/jp309456y     Document Type: Article

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