Intra-center and recombination luminescence of bismuth defects in fused and unfused amorphous silica fabricated by SPCVD

Journal of Non-Crystalline Solids

Volumn 363, Issue 1, 2013, Pages 187-192

  Trukhin, Anatoly ^a   Teteris, Janis ^a   Bazakutsa, Aleksey ^b   Golant, Konstantin ^b  

^a UNIVERSITY OF LATVIA   (Latvia)

^b INSTITUTE OF RADIO ENGINEERING AND ELECTRONICS   (Russian Federation)

Author keywords

Bismuth doped silicon dioxide; Keywords; Luminescence decay kinetics; Near infrared luminescence; UV excitation

Indexed keywords

BISMUTH-DOPED; KEYWORDS; LUMINESCENCE DECAY KINETICS; NEAR INFRARED LUMINESCENCE; UV EXCITATION;

ACTIVATION ENERGY; BISMUTH; BROWNIAN MOVEMENT; ELECTRON TRANSITIONS; EXCIMER LASERS; INFRARED DEVICES; LIGHT; LUMINESCENCE; TUBES (COMPONENTS); TWO PHOTON PROCESSES;

FUSED SILICA;

EID: 84872368680     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2012.12.035     Document Type: Article

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