High thermal stability of piezoelectric properties in (Na 0.5Bi0.5TiO3)x-(BaTiO 3)y-(Na0.5K0.5NbO3) 1-x-y ceramics

Applied Physics Letters

Volumn 102, Issue 1, 2013, Pages

  Gupta, Shashaank ^a   Priya, Shashank ^a  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BATIO; DYNAMIC SCALING; FERROELECTRIC PROPERTY; HIGH THERMAL STABILITY; PIEZOELECTRIC PROPERTY; PIEZOELECTRIC RESPONSE; PIEZORESPONSE; TEMPERATURE DEPENDENT; TEMPERATURE DEPENDENT BEHAVIOR; TIO;

BARIUM COMPOUNDS; CERAMIC MATERIALS; FERROELECTRIC CERAMICS; NIOBIUM OXIDE; PIEZOELECTRICITY; THERMODYNAMIC STABILITY; X RAY DIFFRACTION ANALYSIS;

SODIUM;

EID: 84872319653     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4773983     Document Type: Article

References (19)

1. B. Jaffe, W. R. Cook, and H. L. Jaffe, Piezoelectric Ceramics (Academic, London, 1971).
2. S. Zhang, R. Xia, and T. R. Shrout, Appl. Phys. Lett. 91 (13), 132913 (2007). 10.1063/1.2794400
3. H. L. Du, W. C. Zhou, F. Luo, D. M. Zhu, S. B. Qu, and Z. B. Pei, Appl. Phys. Lett. 91 (20), 202907 (2007). 10.1063/1.2815750
4. G. Z. Zang, J. F. Wang, H. C. Chen, W. B. Su, C. M. Wang, P. Qi, B. Q. Ming, J. Du, and L. M. Zheng, Appl. Phys. Lett. 88 (21), 212908 (2006). 10.1063/1.2206554
5. S. Zhang, R. Xia, H. Hao, H. Liu, and T. R. Shrout, Appl. Phys. Lett. 92 (15), 152904 (2008). 10.1063/1.2908960
6. Y. Wang, D. Damjanovic, N. Klein, and N. Setter, J. Am. Ceram. Soc. 91 (6), 1962 (2008). 10.1111/j.1551-2916.2008.02392.x
7. M. Matsubara, T. Yamaguchi, K. Kikuta, and S. Hirano, Jpn. J. Appl. Phys. Part 1 44 (1A), 258 (2005) 10.1143/JJAP.44.258.
8. Q. M. Zhang, H. Wang, N. Kim, and L. E. Cross, J. Appl. Phys. 75 (1), 454 (1994). 10.1063/1.355874
9. X. L. Zhang, Z. X. Chen, L. E. Cross, and W. A. Schulze, J. Mater. Sci. 18 (4), 968 (1983). 10.1007/BF00551962
10. F. Jona and G. Shirane, Ferroelectric Crystals (Pergamon, Oxford, 1962).
11. R. Ahluwalia, T. Lookman, A. Saxena, and W. Cao, Phys. Rev. B 72 (1), 014112 (2005). 10.1103/PhysRevB.72.014112
12. S. Gupta and S. Priya, Appl. Phys. Lett. 98 (24), 242906 (2011). 10.1063/1.3600058
13. N. Wongdamnern, A. Ngamjarurojana, S. Ananta, Y. Laosiritaworn, and R. Yimnirun, Key Eng. Mater. 421-422, 399 (2010). 10.4028/www.scientific.net/KEM. 421-422.399
14. T. Leist, T. Granzow, W. Jo, and J. Rodel, J. Appl. Phys. 108 (1), 014103 (2010). 10.1063/1.3445771
15. M. Rao, H. R. Krishnamurthy, and R. Pandit, Phys. Rev. B 42 (1), 856 (1990). 10.1103/PhysRevB.42.856
16. N. Wongdamnern, A. Ngamjarurojana, Y. Laosiritaworn, S. Ananta, and R. Yimnirun, J. Appl. Phys. 105 (4), 044109 (2009). 10.1063/1.3086317
17. L. Pintilie, I. Vrejoiu, D. Hesse, G. LeRhun, and M. Alexe, Phys. Rev. B 75 (22), 224113 (2007). 10.1103/PhysRevB.75.224113
18. F. Li, Z. Xu, X. Wei, and X. Yao, J. Phys. D: Appl. Phys. 42 (9), 095417 (2009). 10.1088/0022-3727/42/9/095417
19. S. Zhang, J. Luo, W. Hackenberger, and T. R. Shrout, J. Appl. Phys. 104 (6), 064106 (2008) 10.1063/1.2978333.